SiC Intelligent Power Modules
Silicon Carbide (SiC) Power Transistors are now offering outstanding performances versus their silicon counterparts: Their low on-resistance at high blocking voltages, high switching speed and thermal performance allows system engineers to achieve significant gains in size, weight and efficiency for motor drives and battery chargers, in electric vehicles (EV) for example. The continuous drop in pricing is making SiC a mainstream technology. However, an important challenge for the adoption of SiC and other wide bandgap transistors in high power applications is the availability of well-optimized power modules as well as the learning curve in reliably driving them.
Intelligent Power Modules answer both challenges by offering highly integrated plug-in-play solutions accelerating time-to-market and saving engineering resources. Transitioning to SiC is a long journey that can be shrunk drastically by adopting our SiC Intelligent Power Module platform, benefiting from more than 10 years of expertise in the development of SiC power modules and gate drivers.
A 3-phase 1200V SiC MOSFET Intelligent Power Module platform integrating the power switches and gate driver based on the CISSOID HADES2® chipset.
These modules address high power density converters offering a SiC power module designed for operation at a high junction temperature (up to 175°C). This solution gives access to the full benefits of SiC technology to achieve high power density thanks to low switching losses and high temperature operation.
The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD, Anti-overlapping).
The platform includes 3 modules with pin fin AlSiC baseplate for liquid cooling with different current rating allowing to find the best trade-off between cost, conductive and switching losses. It also includes a flat AlSiC baseplate module for applications where liquid-cooling is not an option.
|Part Number||Max VDS||Max IDC||Typ. Ron||Baseplate||Datasheet|
|CXT-PLA3SA12340AA||1200V||340A||4.19 mOhms||Pin fin||CXT-PLA3SA12340A.pdf|
|CXT-PLA3SA12450AA||1200V||450A||3.25 mOhms||Pin fin||CXT-PLA3SA12450A.pdf|
|CXT-PLA3SA12550AA||1200V||550A||2.53 mOhms||Pin fin||CXT-PLA3SA12550A.pdf|
The 3-phase 1200V SiC MOSFET Intelligent Power Modules platform features:
- Power Devices Junction Temperature: -40°C to +175°C
- Gate Driver Ambient Temperature: -40°C to 125°C
- Drain-to-source breakdown voltage: 1200V
- Low On Resistance: 2.53mOhms to 4.19mOhms typ.
- Max continuous current: 340A to 550A at Tf=25°C
- Thermal resistance: 0.15 °C/W typ.
- Switching Energy@ 600V/300A: Eon=7.5mJ to 9mJ/Eoff=7mJ to 7.4mJ
- Switching frequency: 50kHz max
- Isolation (baseplate - power pins): 3600VAC @50Hz (1min)
- Common mode transient immunity: >50kV/μs
- Low parasitic capacitance (primary-secondary): typ 11pF per phase
- Gate Driver Protections:
- Under Voltage Lockout (UVLO)
- Desaturation Protection
- Soft Shutdown turn-off (SSD)
- Negative gate drive (-3V)
- Active Miller Clamping (AMC)
- Gate-Source Short-circuit Protection
SiC Inverter Platform
CISSOID is working with partners in offering a highly integrated SiC Inverter Platform.
Control board & algorithms
Together with the company Silicon Mobility, CISSOID is offering the OLEA® COMPOSER - T222 SiC Inverter Starter Kit that mechanically and electrically integrates the T222 FPCU controller board and application software from Silicon Mobility together with 3-Phase 1200V/340A-550A SiC MOSFET Intelligent Module from CISSOID. The kit offers:
- 3-Phase 1200V/340A-550A SiC Inteligent Power Module
- A controller board based on OLEA T222 FPCU
- ISO-26262 ASIL-D Design-Ready Certified
- Advanced control algorithms for highly energy-efficient systems
- Closed-loop control based on Field Oriented Control and variable SVPWM switching up to 50 kHz with short dead time compensation
Download advanced information on the OLEA® COMPOSER - T222 SiC Inverter Starter Kit.
In cooperation with the company Advanced Conversion Inc, and our distributor NAC Semi, CISSOID offers high performance DC-Link capacitors mechanically integrated with our SiC Intelligent Power Modules. These capacitors offer low ESL (<8nH) and low ESR for fast switching SiC transistors and for high power density:
|Part Number||VDC||Cap.||ESR at 20kHz||Tmax|
Users can either download 3D printing file or purchase the reference cooler kit. To support inverter and power converter design, CISSOID also provides 3D step files (see below) and LTspice models its power modules.
Download Support files
Download CXT-PLA3SA Reference Cooler 3D Step file.
Download CXT-PLA3SA Reference Cooler 3D Printing File for 3D printing in polymer material (PA12) and fast evaluation of CXT-PLA3SA modules.
Download CXT-PLA3SA Mounting and Cooling Recommandations Application Note for pin fin baseplate modules.
Download LTspice Model Library for CISSOID's SiC Intelligent Power Modules.
Read our papers about SiC MOSFET Intelligent Power Modules:
"A 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-Mobility" in Bodo's Power Systems Magazine, May 2020 (Download the full article in PDF, English).
"三相 1200V/450A SiC MOSFET 电动汽车智能 功率模块", in Bodo's Power Systems China Magazine, June 2020 (Download the full article in PDF, Chinese).
"Modulo di Potenza Intelligente per la Mobilità Elettrica", Elettrica Oggi Power, Oct. 2020 (Download the full article in PDF, Italian).
"SiC MOSFET Intelligent Power Module Platform For E-Mobility Applications", at Online Wide Bandgap Conference, 9 Dec. 2020, (Download the presentation in PDF, English).
"SiC IPMs scupper range anxiety in electric vehicles", in Electronic Specifier, April 2021.
"Liquid-cooled Modules with integrated 3-Phase SiC MOSFET", in Power Electronics News, May 2021.
"车，不用SiC都不好意思叫电动出行", in Power Electronics China, July 2021.
"Impact of Increasing Power Density & Switching Frequency on the Thermal Requirements & Design of Gate Drivers", at ECPE Workshop on Advanced Drivers for Si, SiC & GaN Power Semiconductor Devices, 15-16 February 2022 (Download the presentation in PDF).
"碳化硅器件挑战现有封装技术", in Electronics and Packaging, February 2022.
"碳化硅模块的高温封装已成趋势", in Compound Semiconductor China, March 2022.