27 April 2021

CISSOID expands its SiC Intelligent Power Modules platform for E-Mobility and Aerospace Markets

This site uses cookies. By continuing to browse the site, you are agreeing to our use of cookies.
Homepage > SiC Power Modules

SiC Intelligent Power Modules


SiC-IPMSilicon Carbide (SiC) Power Transistors are now offering outstanding performances versus their silicon counterparts: Their low on-resistance at high blocking voltages, high switching speed and thermal performance allows system engineers to achieve significant gains in size, weight and efficiency for motor drives and battery chargers, in electric vehicles (EV) for example. The continuous drop in pricing is making SiC a mainstream technology. However, an important challenge for the adoption of SiC and other wide bandgap transistors in high power applications is the availability of well-optimized power modules as well as the learning curve in reliably driving them.

Intelligent Power Modules answer both challenges by offering highly integrated plug-in-play solutions accelerating time-to-market and saving engineering resources. Transitioning to SiC is a long journey that can be shrunk drastically by adopting our SiC Intelligent Power Module platform, benefiting from more than 10 years of expertise in the development of SiC power modules and gate drivers.


A 3-phase 1200V SiC MOSFET Intelligent Power Module platform integrating the power switches and gate driver based on the CISSOID HADES2® chipset.

These modules address high power density converters offering a SiC power module designed for operation at a high junction temperature (up to 175°C). This solution gives access to the full benefits of SiC technology to achieve high power density thanks to low switching losses and high temperature operation.

The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD, Anti-overlapping).

 The platform includes 3 modules with pin fin AlSiC baseplate for liquid cooling with different current rating allowing to find the best trade-off between cost, conductive and switching losses. It also includes a flat AlSiC baseplate module for applications where liquid-cooling is not an option.

Part Number Max VDS Max IDC Typ. Ron Baseplate Datasheet
CXT-PLA3SA12340AA 1200V 340A 4.19 mOhms Pin fin CXT-PLA3SA12340A.pdf
CXT-PLA3SA12450AA 1200V 450A 3.25 mOhms Pin fin CXT-PLA3SA12450A.pdf
CXT-PLA3SA12550AA 1200V 550A 2.53 mOhms Pin fin CXT-PLA3SA12550A.pdf
CMT-PLA3SB12340AA 1200V 340A 3.25 mOhms Flat CMT-PLA3SB12340A.pdf


The 3-phase 1200V SiC MOSFET Intelligent Power Modules platform features:

  • Power Devices Junction Temperature: -40°C to +175°C
  • Gate Driver Ambient Temperature: -40°C to 125°C
  • Drain-to-source breakdown voltage: 1200V
  • Low On Resistance: 2.53mOhms to 4.19mOhms typ.
  • Max continuous current: 340A to 550A at Tf=25°C
  • Thermal resistance: 0.15 °C/W typ.
  • Switching Energy@ 600V/300A: Eon=7.5mJ to 9mJ/Eoff=7mJ to 7.4mJ
  • Switching frequency: 25KHz max
  • Isolation (baseplate - power pins): 3600VAC @50Hz (1min)
  • Common mode transient immunity: >50kV/μs
  • Low parasitic capacitance (primary-secondary): typ 11pF per phase
  • Gate Driver Protections: 
    • Under Voltage Lockout (UVLO)
    • Desaturation Protection
    • Soft Shutdown turn-off (SSD)
    • Negative gate drive (-3V)
    • Active Miller Clamping (AMC)
    • Gate-Source Short-circuit Protection

Support for fast power converter design

SiC-IPMA great benefit of these IPMs is the high level of integration of the power module with its gate driver and AlSiC pin fin or flat baseplate. This allows a rapid mechanical integration with the other elements of the power converter such as the DC bus capacitor and the reference cooler as shown in the Figure on the right. The system designer may save a lot of time having access to an accurate a 3D model of the IPM including the gate driver right from the very start of development.

Power converter design is also supported with LTSpice models of the IPMs.


Download CXT-PLA3SA 3D Step file (pin fin baseplate) or CMT-PLA3SB 3D Step file (flat baseplate) for virtual integration into your power inverter design.

Download CXT-PLA3SA Reference Cooler 3D Step file.

Download CXT-PLA3SA Reference Cooler 3D Printing File for 3D printing in polymer material (PA12) and fast evaluation of CXT-PLA3SA12450.

Download CXT-PLA3SA Mounting and Cooling Recommandations Application Note for pin fin baseplate modules.

Download LTspice Model Library for CISSOID's SiC Intelligent Power Modules.

In Press

Read our papers about SiC MOSFET Intelligent Power Modules:

"A 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-Mobility" in  Bodo's Power Systems Magazine, May 2020 (Download the full article in PDF, English).

"三相 1200V/450A SiC MOSFET 电动汽车智能 功率模块", in Bodo's Power Systems China Magazine, June 2020 (Download the full article in PDF, Chinese).

"Intelligent Power Modules Accelerate Transition to SiC-Based Electric Motion", in E-Mobility Technology International Magazine, Winter 2020, p128.(Download the full article in PDF, English).

"Modulo di Potenza Intelligente per la Mobilità Elettrica", Elettrica Oggi Power, Oct. 2020 (Download the full article in PDF, Italian).

"SiC MOSFET Intelligent Power Module Platform For E-Mobility Applications", at Online Wide Bandgap Conference, 9 Dec. 2020, (Download the presentation in PDF, English). 

"SiC IPMs scupper range anxiety in electric vehicles", in Electronic Specifier, April 2021.

"Liquid-cooled Modules with integrated 3-Phase SiC MOSFET", in Power Electronics News, May 2021.

"车,不用SiC都不好意思叫电动出行", in Power Electronics China, July 2021.