SiC Intelligent Power Modules

CISSOID-3-phase-SiC-intelligent-power-module-pinfin

Our 3-phase 1200V Silicon Carbide (SiC) MOSFET Intelligent Power Module platform integrates the power switches and gate drivers, based on the CISSOID HADES2® chipset.

These modules address high power density converters offering a SiC power module designed for operation at a high junction temperature (up to 175°C). This solution gives access to the full benefits of SiC technology to achieve high power density thanks to low switching losses and high temperature operation.



Silicon_Carbide_Wafer_X-Fab-Texas

The integration of the gate drivers together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt, and protection of the power stages (desat, UVLO, AMC, SSD, anti-overlapping).

The platform includes 3 modules with a pin fin AlSiC baseplate for liquid cooling, with diverse current ratings, allowing to find the best trade-off between cost, conductive and switching losses. The range also includes a flat AlSiC baseplate module for applications where liquid cooling is not an option.



Why?


Silicon Carbide (SiC) Power Transistors are now offering outstanding performance versus their silicon counterparts: Their low on-resistance at high blocking voltages, high switching speed and thermal performance allows system engineers to achieve significant gains in size, weight and efficiency for motor drives and battery chargers, in electric vehicles (EV) for example. The continuous drop in pricing is making SiC a mainstream technology. However, an important challenge for the adoption of SiC and other wide bandgap transistors in high power applications is the availability of well-optimized power modules as well as the learning curve in reliably driving them.

Intelligent Power Modules answer both challenges by offering highly integrated plug-and-play solutions, accelerating time-to-market and saving engineering resources. Transitioning to SiC is a long journey that can be shrunk drastically by adopting our SiC Intelligent Power Module platform, benefiting from more than 10 years of expertise in the development of SiC power modules and gate drivers.


 

Platform performance

  • Power devices junction temperature: -40°C to +175°C
  • Gate driver board ambient temperature: -40°C to 125°C
  • Drain-to-source breakdown voltage: 1200V
  • Low on resistance: 2.53mOhms to 4.19mOhms typical
  • Max continuous current: 340A to 550A at Tf=25°C
  • Thermal resistance: 0.15 °C/W typical
  • Switching energy@ 600V/300A: Eon=7.5mJ to 9mJ/Eoff=7mJ to 7.4mJ
  • Switching frequency: 50kHz max
  • Isolation (baseplate - power pins): 3600VAC @50Hz (1min)
  • Common mode transient immunity: >50kV/μs
  • Low parasitic capacitance (primary-secondary): typ 11pF per phase
  • Gate Driver Protections: 
      • Under Voltage Lockout (UVLO)
      • Desaturation Protection
      • Soft Shutdown turn-off (SSD)
      • Negative gate drive (-3V)
      • Active Miller Clamping (AMC)
      • Gate-Source Short-circuit Protection

Support files

Type

Title

Link

Model

LTspice Model Library for CISSOID's SiC Intelligent Power Modules

     zip

Application Note

DC-Link Capacitors for CISSOID SiC Intelligent Power Modules Application Note

     pdf

Application Note

CXT-PLA3SA-Mounting-cooling-recommendations-Application-Note-AN-202164-V2.3.pdf

     pdf

3D Print File

CXT-PLA3SA Reference Cooler 3D Printing File for 3D printing in polymer material (PA12)

     zip

Step File

CXT-PLA3SA Reference Cooler 3D Step file

     zip

Step File

CMT-PLA3SB 3D Step file (flat baseplate)

     zip

Step File

CXT-PLA3SA 3D Step file (pin fin baseplate)

     zip



Articles


Date

Source 

Title

Type

March 2023

Electronics Today

CISSOID Cover Story, Electronics Today March 2023

     pdf

March 2022

Compound Semiconductor China

碳化硅模块的高温封装已成趋势

     link

Feb 2022

Electronics and Packaging

碳化硅器件挑战现有封装技术

     link

Feb 2022

ECPE Workshop on Advanced Drivers

Impact of Increasing Power Density & Switching Frequency on the Thermal Requirements & Design of Gate Drivers", at ECPE Workshop on Advanced Drivers for Si, SiC & GaN Power Semiconductor Devices

     pdf

July 2021Power Electronics China
车,不用SiC都不好意思叫电动出行
     link
May 2021Power Electronics News
Liquid-cooled Modules with integrated 3-Phase SiC MOSFET
     link
Apr 2021Electronic Specifier
SiC IPMs scupper range anxiety in electric vehicles
     link   
Dec 2020 Online Wide Bandgap Conference
SiC MOSFET Intelligent Power Module Platform For E-Mobility Applications", 
presentation at Online Wide Bandgap Conference
     pdf

Oct 2020

Elettrica Oggi Power

Modulo di Potenza Intelligente per la Mobilità Elettrica

     pdf

Winter 2020

E-Mobility Technology 
International Magazine

Intelligent Power Modules Accelerate Transition to SiC-Based Electric Motion

     pdf

June 2020
Bodo's Power Systems China Magazine
三相 1200V/450A SiC MOSFET 电动汽车智能 功率模块
     pdf
May 2020 Bodo's Power Systems Magazine
A 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-Mobility
     pdf