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3 November 2020

CISSOID remains operational during Covid-19 crisis

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Homepage > SiC Power Modules

SiC Intelligent Power Modules

Why

SiC-IPMSilicon Carbide (SiC) Power Transistors are now offering outstanding performances versus their silicon counterparts: Their low on-resistance at high blocking voltages, high switching speed and thermal performance allows system engineers to achieve significant gains in size, weight and efficiency for motor drives and battery chargers. The continuous drop in pricing is making SiC a mainstream technology. However, an important challenge for the adoption of SiC in high power applications is the availability of well-optimized power modules as well as the learning curve in reliably driving them.

Intelligent Power Modules answer both challenges by offering highly integrated plug-in-play solutions accelerating time-to-market and saving engineering resources. Transitioning to SiC is a long journey that can be shrunk drastically by adopting our SiC Intelligent Power Module platform, benefiting from more than 10 years of expertise in the development of SiC power modules and gate drivers.

 

What

CXT-PLA3SA12450 is a 3-phase 1200V/450A SiC MOSFET Intelligent Power Module integrating the power switches and gate driver based on the CISSOID HADES2® chipset.

This module addresses high power density converters offering a SiC power module designed for operation at a high junction temperature (up to 175°C). This solution gives access to the full benefits of SiC technology to achieve high power density thanks to low switching losses and high temperature operation.

The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD, Anti-overlapping). 

See CXT-PLA3SA12450 product page or download the product datasheet.
 

Performance

SiC-IPMCXT-PLA3SA12450 3-phase 1200V/450A SiC MOSFET Intelligent Power Module features:

  • Power Devices Junction Temperature: -40°C to +175°C
  • Gate Driver Ambient Temperature: -40°C to 125°C
  • Drain-to-source breakdown voltage: 1200V
  • Low On Resistance: 3.25mOhms typ.
  • Max continuous current: 450A/300A at Tf=25°C/90°C
  • Thermal resistance: 0.15 °C/W typ.
  • Switching Energy@ 600V/300A: Eon=7.8mJ/Eoff=8mJ
  • Switching frequency: 25KHz max
  • Isolation (baseplate - power pins): 3600VAC @50Hz (1min)
  • Common mode transient immunity: >50kV/μs
  • Low parasitic capacitance (primary-secondary): typ 11pF per phase
  • Gate Driver Protections: Under Voltage Lockout (UVLO), Desaturation Protection, Soft Shutdown turn-off (SSD), Negative gate drive (-3V), Active Miller Clamping (AMC), Gate-Source Short-circuit Protection

 

Support for fast power converter design

SiC-IPMA great benefit of this IPM is the high level of integration of the power module with its gate driver and AlSiC pin fin baseplate. This allows a rapid mechanical integration with the other elements of the power converter such as the DC bus capacitor and the cooling system as shown in the Figure on the right. The system designer may save a lot of time having access to an accurate a 3D model of the IPM including the gate driver right from the very start of development.

 

Download

Download CXT-PLA3SA12450 Datasheet.

Download CXT-PLA3SA12450 3D Step file for virtual integration into your power inverter design.

 

In Press

"A 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-Mobility" in  Bodo's Power Systems Magazine, May 2020 (Download the full article in PDF, English).

"三相 1200V/450A SiC MOSFET 电动汽车智能 功率模块", in Bodo's Power Systems China Magazine, June 2020 (Download the full article in PDF, Chinese).

"Intelligent Power Modules Accelerate Transition to SiC-Based Electric Motion", in E-Mobility Technology International Magazine, Winter 2020, p128.(Download the full article in PDF).

"Modulo di Potenza Intelligente per la Mobilità Elettrica", Elettrica Oggi Power, Oct. 2020 (Download the full article in PDF).