SiC Gate Drivers
Wide bandgap semiconductors, in particular Silicon Carbide (SiC), offer higher efficiency and an increased power density, making them a technology of choice for electrical vehicles (EV) and industrial power converters including motor drive inverters and battery chargers.
To take full advantage of the fast switching and low losses of SiC MOSFETs, two main challenges remain: having access to well-optimized power modules featuring low parasitic inductances and finding a robust and fast gate driver to reliably and efficiently drive them.
High Voltage Gate Driver Boards - CMT series (-55°C to +125°C)
CMT-TIT0697
1200V HALF-BRIDGE SIC MOSFET GATE DRIVER (OPTIMIZED FOR XM3 POWER MODULES)
CMT-TIT8243
1200V HALF-BRIDGE SIC MOSFET GATE DRIVER (OPTIMIZED FOR 62MM POWER MODULES)
CMT-TIT8244
1700V HALF-BRIDGE SIC MOSFET GATE DRIVER (OPTIMIZED FOR 62MM POWER MODULES)
High Voltage Gate Driver ICs - CMT series (-55°C to +175°C)
CMT-HADES2P
GATE DRIVER PRIMARY SIDE IC (175°C)
CMT-HADES2S
GATE DRIVER SECONDARY SIDE IC (175°C)
High Voltage Gate Drivers - CHT series (-55°C to +225°C)
CHT-HADES2P
GATE DRIVER PRIMARY SIDE IC
CHT-HADES2S
GATE DRIVER SECONDARY SIDE IC
Medium Voltage Gate Driver ICs - CMT series (-55°C to +175°C)
ATLAS
DUAL CHANNEL POWER TRANSISTOR DRIVER
HYPERION
40V HALF-BRIDGE GATE DRIVER
Articles
Date | Source | Title | Type |
Feb 2022 | ECPE Workshop on Advanced Drivers | Impact of Increasing Power Density & Switching Frequency on the Thermal Requirements & Design of Gate Drivers", at ECPE Workshop on Advanced Drivers for Si, SiC & GaN Power Semiconductor Devices | |
Dec 2019
|
Design & Electronik
|
SiC-Module richtig steuern
| |
Oct 2019 |
Bodo's Power Systems China Magazine
|
一款高温高压隔离型栅极驱动器用于驱动 62 mm SiC MOSFET 半桥功率模块
| |
Sep 2019 |
Bodo's Power Systems Magazine
|
A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules
|