SiC Gate Drivers
Wide bandgap semiconductors, in particular Silicon Carbide (SiC), offer higher efficiency and an increased power density, making them a technology of choice for electrical vehicles (EV) and industrial power converters including motor drive inverters and battery chargers.
To take full advantage of the fast switching and low losses of SiC MOSFETs, two main challenges remain: having access to well-optimized power modules featuring low parasitic inductances and finding a robust and fast gate driver to reliably and efficiently drive them.
High Voltage Gate Driver Boards - CMT series (-55°C to +125°C)
High Voltage Gate Driver ICs - CMT series (-55°C to +175°C)
High Voltage Gate Drivers - CHT series (-55°C to +225°C)
Medium Voltage Gate Driver ICs - CMT series (-55°C to +175°C)
ECPE Workshop on Advanced Drivers
|Impact of Increasing Power Density & Switching Frequency on the Thermal Requirements & Design of Gate Drivers", at ECPE Workshop on Advanced Drivers for Si, SiC & GaN Power Semiconductor Devices
Design & Electronik
SiC-Module richtig steuern
Bodo's Power Systems China Magazine
一款高温高压隔离型栅极驱动器用于驱动 62 mm SiC MOSFET 半桥功率模块
Bodo's Power Systems Magazine
A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules