IGBT Power Modules
CISSOID's IGBT Power Module range consists of high reliability, high-temperature components, guaranteed for operation over the full range of -55°C to +175°C (Tj). Consisting of a half-bridge topology, they are available in standard 62mm power packages, with a breakdown voltage above 1200V and current switching capability up to 300A. The devices feature
free-wheeling diodes in parallel with the IGBT transistors.