NEWS

10 January 2021

TOP PRODUCTS 2020: CISSOID's 1200V/450A SiC MOSFET Intelligent Power Module selected by MWRF readers

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Homepage > SiC Gate Drivers

SiC Gate Driver Boards

Why

SiC-IPMWide bandgap semiconductors, in particular Silicon Carbide (SiC), are  offering a higher efficiency and an increased power density, making them a technology of choice for electrical vehicles (EV) and industrial power converters including motor drive inverters and battery chargers.

In order to take full advantage of the fast switching and low losses of SiC MOSFETs, two main challenges remain: having access to well optimized power modules featuring low parasitic inductances and finding a robust and fast gate driver to reliably and efficiently drive them.

What

CISSOID offers High Voltage Gate Driver boards rated at 125°C (Ta) optimized for 62mm and XM3 SiC MOSFET Power Modules:

They offer robustness against high dI/dt and high dV/dt as well as protections of the power module:

  • Under voltage lockout (UVLO)

  • Anti-overlap protection (on PWM inputs)

  • Glitch suppressor (on PWM inputs)

  • Active Miller Clamping

  • Desaturation protection

  • Gate-Source short-circuit protection

These gate driver boards provide thermal headroom for high density power converter design in automotive and industrial applications enabling high frequency (>100kHz) and fast switching (dV/dt>50kV/µs), improving efficiency and reducing size and weight.

CISSOID also offers custom gate driver boards for 3-Phase SiC MOSFET power modules leveraging on our Gate Driver technology at the heart of our 3-Phase SiC MOSFET Intelligent Power Modules.

Performance

SiC-IPMCISSOID's SiC Gate Driver boards feature:

  • Operating temperature: -40°C to 125°C

  • Bus voltage:1200V to 1700V max

  • 14mm creepage/12mm clearance

  • Isolation:  3600VAC to 4600V @50Hz (1min)

  • >50kV/µs dV/dt immunity

  • Low parasitic capacitance between primary and high-side: 10pF

  • Switching frequency upto 100kHz

  • +20V/-5V or +15V/-4V (3% precision) gate driving voltages

  • Low inductance gate loop design

  • Single power supply: 12V to 18V

  • RS422 PWM input interface

  • Open-drain fault output

  • Optional on-board non-overlap generation

Application Information & Datasheets

Product datasheets are provided with a detailed application section: 

Support for power converter design

SiC-IPMTo facilitate the virtual integration of of the gate driver boards in power modules design, CISSOID provides 3D Step models of the boards:

In Press

Read our papers about SiC Gate Driver Boards:

"A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules", in Bodo's Power Systems Magazine, September 2019 (Download the full article in PDF, English).

"一款高温高压隔离型栅极驱动器用于驱动 62 mm SiC MOSFET 半桥功率模块", in Bodo's Power Systems China Magazine, October 2019 (Download the full article in PDF, Chinese).

"SiC-Module richtig steuern", in Design & Electronik, December 2019 (Download the full article in PDF, German).

Read also our papers about SiC MOSFET Intelligent Power Modules:

"A 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-Mobility" in  Bodo's Power Systems Magazine, May 2020 (Download the full article in PDF, English).

"三相 1200V/450A SiC MOSFET 电动汽车智能 功率模块", in Bodo's Power Systems China Magazine, June 2020 (Download the full article in PDF, Chinese).

"Intelligent Power Modules Accelerate Transition to SiC-Based Electric Motion", in E-Mobility Technology International Magazine, Winter 2020, p128.(Download the full article in PDF, English).

"Modulo di Potenza Intelligente per la Mobilità Elettrica", Elettrica Oggi Power, Oct. 2020 (Download the full article in PDF, Italian).

"SiC MOSFET Intelligent Power Module Platform For E-Mobility Applications", at Online Wide Bandgap Conference, 9 Dec. 2020, (Download the presentation in PDF, English).