CXT-PLA3SA12340A is a 3-phase 1200V/340A Silicon Carbide (SiC) MOSFET Intelligent Power Module integrating the power switches and a gate driver based on the CISSOID HADES2 chipset. Cooled down through a lightweight AlSiC Pin Fin baseplate, this module addresses high power density converters offering a SiC power module designed for operation at high junction temperature up to 175°C. Compared to IGBT modules, this solution gives access to the full benefits of SiC technology to achieve high efficiency, high power density and high reliability thanks to low switching losses and high temperature operation. The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD).

CMT-PLA9869 is a High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package. The product is guaranteed for normal operation over the full range -55°C to +175°C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A. The device features a body diode that can be used as free-wheeling diode.

CMT-TIT8243 is a Gate Driver board optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, offers thermal headroom for the design of high density power converters in automotive and industrial applications. It enables high frequency (>100KHz) and fast SiC MOSFET’s switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters. The board is designed for harsh voltage environments supporting the drive of 1200V power modules with isolation voltages up to 3600V (50Hz, 1min) and creepage distances of 14mm. Protection functions such as undervoltage lockout (UVLO), Active Miller Clamping (AMC) and Desaturation detection ensure the safe drive and reliable protection of the power module in case of fault events.

The CXT-741G57 is a high temperature configurable device enabling 10 different logic functions: Inverter, 2-Input AND, 2-Input NOR with both inputs inverted, 2-Input NAND with A input inverted, 2-Input OR with B Input Inverted, 2-Input NAND with B input inverted, 2-Input OR Gate with A input inverted, 2-Input NOR Gate, 2-Input AND with both inputs inverted, 2-Input XNOR. This device is optimized for automotive applications and specificied for operating junction temperature from -40°C up to +175°C (Tj), in excess of AEC-Q100 (Grade 0) qualification standard.

CXT-PLA3SA12450A is a 3-phase 1200V/450A Silicon Carbide (SiC) MOSFET Intelligent Power Module integrating the power switches and a gate driver based on the CISSOID HADES2 chipset. Cooled down through a lightweight AlSiC Pin Fin baseplate, this module addresses high power density converters offering a SiC power module designed for operation at high junction temperature up to 175°C. Compared to IGBT modules, this solution gives access to the full benefits of SiC technology to achieve high efficiency, high power density and high reliability thanks to low switching losses and high temperature operation. The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD).

CXT-PLA3SA12550A is a 3-phase 1200V/550A Silicon Carbide (SiC) MOSFET Intelligent Power Module integrating the power switches and a gate driver based on the CISSOID HADES2 chipset. Cooled down through a lightweight AlSiC Pin Fin baseplate, this module addresses high power density converters offering a SiC power module designed for operation at high junction temperature up to 175°C. Compared to IGBT modules, this solution gives access to the full benefits of SiC technology to achieve high efficiency, high power density and high reliability thanks to low switching losses and high temperature operation. The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD).

CXT-STA4919 is part of the CXT series of components designed and qualified for high-temperature automotive environments.

CMT-STA4453 is part of the CMT series of components designed and qualified for high-temperature industrial and aerospace environments.

The CHT-LDOP is a positive low-dropout linear voltage regulator. The output voltage can be chosen from a list of available values (see table below). CHT-LDOP is adapted to systems with only a positive power supply.

The CHT-LDNS is a high-temperature negative low-dropout linear voltage regulator. The output voltage can be chosen from a list of available values (see table below). CHT-LDNS is adapted to system with single or symmetrical power supply.  

The SiC Inverter Reference Design is based on CISSOIDs unique hardware and software platform, setting new levels in terms of power density and efficiency, enabling the rapid development of Silicon Carbide (SiC) based inverters for electric drive trains. 

The reference design offers a modular electrical and mechanical integration of a 3-phase 1200V/550A SiC MOSFET Intelligent Power Module from CISSOID, combined with the OLEA® T222 FPCU based control board and OLEA® APP INVERTER application software from Silicon Mobility. 

To complete the reference design, it includes a DC-Link capacitor, DC and phase current sensors, an EMI filter and liquid cooling.

The CHT-LDOS is a high-temperature positive low-dropout linear voltage regulator. The output voltage can be chosen from a list of available values (see table below). CHT-LDOS is adapted to system using a symmetrical power supply. 

The CHT-VEGA is single chip, positive, adjustable linear voltage regulator with low drop-out. The output voltage can be adjusted by means of an external 2-resistor bridge. The CHT-VEGA is available in a tiny ceramic package TDFP-16 for applications where small PCB footprint is critical.

The CHT-RIGEL is a high-temperature high-voltage adjustable 100mA linear voltage regulator. The output voltage can be adjusted by means of an external 2-resistor divider. The CHT-RIGEL is available in a tiny ceramic package TDFP-16 for applications where small PCB footprint is critical.

CXT-PLA3SB12340A is a 3-phase 1200V/340A Silicon Carbide (SiC) MOSFET Intelligent Power Module integrating the power switches and a gate driver based on the CISSOID HADES2 chipset. Cooled down through a lightweight AlSiC Flat baseplate, this module addresses high power density converters offering a SiC power module designed for operation at high junction temperature up to 175°C. Compared to IGBT modules, this solution gives access to the full benefits of SiC technology to achieve high efficiency, high power density and high reliability thanks to low switching losses and high temperature operation. The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD).

CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated circuit specifically designed to drive widebandgap power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices including normally-On and normally-Off JFETs, MOSFETs and BJTs. It is also used with standard silicon MOSFETs and IGBTs in standard temperature applications (e.g. 125°C) where it brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The circuit features 2 independent push-pull channels capable of sourcing/sinking 2A each. When configured together to drive a single power switch, the combination of the 2 distinct channels allows driving of specific devices that require for instance a dynamic pulse of current in combination with a continuous current in order to be properly turned-on. The circuit includes a soft-shut-down capability that slowly shuts down the power transistor in case of fault.

EVK-HADES1210 Evaluation Kit implements a power half-bridge based on the HADES v2 isolated gate driver and two CISSOID's NEPTUNE, a 10A/1200V SiC MOSFET. It includes an evaluation board that can be used immediately to implement a power converter or a motor drive, and is designed for bus voltage up to 1200V and with application current up to 10A. The two channels can be controlled independently of each other or use a locally generated non-overlap delay. The Reference Design is based on the 2nd generation HADES chipset which consists of 2 devices: a Primary device CHT-HADES2P and a secondary device CHT-HADES2S. The solution includes an isolated power supply built around CHT-HADES2P PWM controller. The Evaluation Board EVK-HADES2® can be used for immediate testing with SiC MOSFET devices. The board is populated with CISSOID integrated circuits in ceramic package guaranteed for -55°C to +225°C. The board is based on a polyimide PCB (rated 200°C). The passive components and the desaturation diode allow operation up to 175°C, with possible short excursions to 225°C for testing. The evaluation board is delivered with the complete electrical schematic, the bill of materials including active and passive components, the Gerber files.