NEWS

27 April 2021

CISSOID expands its SiC Intelligent Power Modules platform for E-Mobility and Aerospace Markets

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SiC MOSFETs

High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package and guaranteed from -55C to +175C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A.