CISSOID, the leader in high temperature semiconductors for the most demanding markets, recently introduced new High Temperature Automotive IC's, Gate Drivers, SiC MOSFET's and IGBT Power Modules for power electronics and intelligent motion in automotive, renewable energy, and energy management.
SiC MOSFET Intelligent Power Modules
This new platform of 3-Phase 1200V/340A-550A SiC MOSFETs Intelligent Power Modules is designed for automotive, industrial and aerospace electrical motor drives. It enables high power density converters giving access to the full benefits of SiC technology thanks to operation at high junction temperature (up to 175°C) and low switching losses.
For more information, visit our page about SiC Intelligent Power Modules.
SiC MOSFET Gate Drivers
Gate Driver boards for SiC MOSFET Power Modules rated at 125°C (Ta) offer thermal headroom for the design of high density power converters in automotive and industrial applications enabling high frequency (>100KHz) and fast switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight.
CMT-PLA9869: High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package and guaranteed from -55°C to +175°C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A.
CISSOID has introduced CXT family of components designed and qualified for high-temperature automotive environments with operating junction temperature from -55°C up to +175°C (Tj):
CXT-STA4919: A 50mA adjustable linear voltage regulator suitable to generate from a +4.5V to +35V voltage source any regulated voltage in the range +3.3V to +28V.
CXT-741xx are 4 configurable devices enabling 13 logic functions: INV, BUFFER, AND, AND w/ inverted input, NAND, NAND w/ inverted input, OR, NOR, NOR w/ inverted input, XOR, NXOR, MUX and D Flip-Flop.