- Voltage References & Regulators
- Power Modules, Transistors & Diodes
- CXT-PLA3SA12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12450A
SiC MOSFET Intelligent Power Module 1200V/450A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12550A
SiC MOSFET Intelligent Power Module 1200V/550A, 3-Phase, Pin Fin Baseplate - CMT-PLA3SB12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, AlSiC Flat Baseplate - CMT-PLA9869
SiC MOSFET 1200V/40mOhms - CMT-PLA2218
IGBT Power Module 1200V/300A - CMT-PLA8963
IGBT Power Module 1200V/200A - NEPTUNE-1210
High Temperature 1200V 10A SiC Power MOSFET - PLUTO-B1230
1200V/30A Dual SiC MOSFET module - PLUTO-B1220
1200V/20A Dual SiC MOSFET module - PLUTO-C1230
1200V/30A Buck or Boost SiC MOSFET module - PLUTO-C1220
1200V/20A Buck or Boost SiC MOSFET module - IO-1210
1200V/10A SiC Schottky Diode - EUROPA-A1230
1200V/30A Dual SiC Schottky Diode module - EUROPA-A1220
1200V/20A Dual SiC Schottky Diode module - SATURN
40V, 5A/10A/20A Power NMOS - EARTH
80V, 5A/10A Power NMOS - VENUS
-30V, 2A/4A/8A Power PMOS - NMOS8001
80V/1A compact NMOS - MARS
30V small signal PMOS - MERCURY
80V small signal NMOS - ELARA
Quad Diode 80V/450mA - CALLISTO
Dual Diode 80V/300mA - Common Anode - GANYMEDE
Dual Diode 80V/300mA - Series connection - AMALTHEA
Dual Diode 80V/3A
- CXT-PLA3SA12340A
- DC-DC Converters
- Gate Drivers
- Analog-to-digital Converters & Comparators
- Amplifiers
- Logic Gates
- Oscillators & Timers
PLUTO-C1230
1200V/30A Buck or Boost SiC MOSFET module
CHT-PLUTO-C1230 is a high-temperature 1200V/30A Buck or Boost Module, i.e. a module including one Silicon Carbide (SiC) MOSFET and one SiC Schottky Diode, independent from each other. It is suitable to implement high-efficiency Buck (step-down) or Boost (step-up) DC-DC converters in high temperature environments. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. The SiC MOSFET has an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V. The SiC Schottky Diode has a forward voltage of 1.35V at 30A.
Typical performances
- Temperature range: -55°C to +210°C
- Drain voltage up to 1200V
- Max drain current @ 175°C (Tc): 25A DC (per switch)
- On-resistance Ron = 20mΩ @ 25°C and 60mΩ @ 210°C (per switch)
- Gate-to-Source Voltage Vgs=-5V to +20V
- Diode forward voltage: 1.35V at 30A
- Hermetic package with isolated case
Applications
- DC motor drives and actuator control
- DC-DC converters
- AC-DC converters and inverters
If you need support for your high temperature design, contact Cissoid.
Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.
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| Buck configuration (step-down) | Boost configuration (step-up) |
Ordering information
| Product name | Ordering reference | Package | Marking |
|---|---|---|---|
| CHT-PLUTO-C1230 | CHT-PLA2228A-HM8A-T | HM8A | CHT-PLA2228A |