PLUTO-B1230
1200V/30A DUAL SIC MOSFET MODULE
CHT-PLUTO-B1230 is a high-temperature 1200V/30A Dual Silicon Carbide MOSFET in a single hermetic module. The intrinsic body diodes can play as freewheeling diodes with the recommendation to use a small duty cycle to limit dissipation. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 60A. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. They have an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V.
Key features
- Temperature range: -55°C to +210°C
- Drain voltage up to 1200V
- Max drain current @ 175°C (Tc): 25A DC (per switch)
- On-resistance Ron = 20mΩ @ 25°C and 60mΩ @ 210°C (per switch)
- Gate-to-Source Voltage Vgs=-5V to +20V
- Hermetic package with isolated case
Applications
- DC motor drives and actuator control
- DC-DC converters
- AC-DC converters and inverters
Ordering information
| Ordering reference | Description | Package | Link |
| CHT-PLA2316A-HM8A-T |
Power Module - SiC MOS - 1200V |
HM8A | Buy Here |