- Voltage References & Regulators
- Power Modules, Transistors & Diodes
- CXT-PLA3SA12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12450A
SiC MOSFET Intelligent Power Module 1200V/450A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12550A
SiC MOSFET Intelligent Power Module 1200V/550A, 3-Phase, Pin Fin Baseplate - CMT-PLA3SB12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, AlSiC Flat Baseplate - CMT-PLA9869
SiC MOSFET 1200V/40mOhms - CMT-PLA2218
IGBT Power Module 1200V/300A - CMT-PLA8963
IGBT Power Module 1200V/200A - NEPTUNE-1210
High Temperature 1200V 10A SiC Power MOSFET - PLUTO-B1230
1200V/30A Dual SiC MOSFET module - PLUTO-B1220
1200V/20A Dual SiC MOSFET module - PLUTO-C1230
1200V/30A Buck or Boost SiC MOSFET module - PLUTO-C1220
1200V/20A Buck or Boost SiC MOSFET module - IO-1210
1200V/10A SiC Schottky Diode - EUROPA-A1230
1200V/30A Dual SiC Schottky Diode module - EUROPA-A1220
1200V/20A Dual SiC Schottky Diode module - SATURN
40V, 5A/10A/20A Power NMOS - EARTH
80V, 5A/10A Power NMOS - VENUS
-30V, 2A/4A/8A Power PMOS - NMOS8001
80V/1A compact NMOS - MARS
30V small signal PMOS - MERCURY
80V small signal NMOS - ELARA
Quad Diode 80V/450mA - CALLISTO
Dual Diode 80V/300mA - Common Anode - GANYMEDE
Dual Diode 80V/300mA - Series connection - AMALTHEA
Dual Diode 80V/3A
- CXT-PLA3SA12340A
- DC-DC Converters
- Gate Drivers
- Analog-to-digital Converters & Comparators
- Amplifiers
- Logic Gates
- Oscillators & Timers
NEPTUNE-1210
High Temperature 1200V 10A SiC Power MOSFET
NEPTUNE-1210 is a high-temperature, high-voltage, Silicon Carbide (SiC) MOSFET switch. It is available in a metal TO-257 package – the metal case being isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C. The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (225°C). The device features a body diode that can be used as free-wheeling diode.
This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On Resistance with equivalent switching energies.
Typical performances:
- Temperature range: -55°C to +225°C
- Drain voltage up to 1200V
- Max drain current @ 225°C: 10A DC
- RDSon= 40mΩ @ 25°C and 120mΩ @ 225°C
- Vgs=-4V to +20V
- Metal TO-257 package
- Pins electrically isolated from the case of the package
Application
- High Temperature, High Power Density and Extended Lifetime Power Converters
- DC-AC Converters for Actuators and Motor Control
- DC-DC converters
- AC-DC converters and battery chargers
If you need support for your high temperature design, contact Cissoid.
Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.
Ordering information
| Product name | Ordering reference | Package | Marking |
|---|---|---|---|
| CHT-NEPTUNE-1210 | CHT-PLA8543D-TO257-T | TO-257 | CHT-PLA8543D |