31 August 2023

CISSOID at The Battery Show North America in Novi, Michigan, on 12-14 Sept 2023.

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1200V/10A SiC Schottky Diode


IO-1210 is a high-temperature Silicon Carbide (SiC) Schottky Diode in a TO-257 hermetically sealed metal package. It is suitable to implement efficient power voltage rectifiers, e.g. in AC-DC converters. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching current up to 10A. The SiC Schottky Diode has a forward voltage of 1.2V at 10A. The maximum continuous DC current is 10A at 175°C (Tc). The Repetitive Peak Fwd Surge Current is 12A.

Typical performances

  • Temperature range: -55°C to +210°C
  • Breakdown voltage up to 1200V
  • Forward voltage = 1.2V at 10A at 25°C
  • Max continuous DC current @ 175°C (Tc) = 10A DC
  • Repetitive Peak Fwd Surge Current: 12A
  • Hermetic package with isolated case



  • DC motor drives and actuator control
  • AC-DC converters and inverters

If you need support for your high temperature design, contact Cissoid.

Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.


CHT-IO-1210 functional diagram                  

TO257 (Pin1= Cathode; Pin2= Anode Pin3= NC) (case floating)

Ordering information

Product name Ordering reference Package Marking
CHT-IO-1210 CHT-PLA1122A-TO257-T TO-257 CHT-PLA1122A