- Voltage References & Regulators
- Power Modules, Transistors & Diodes
- CXT-PLA3SA12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12450A
SiC MOSFET Intelligent Power Module 1200V/450A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12550A
SiC MOSFET Intelligent Power Module 1200V/550A, 3-Phase, Pin Fin Baseplate - CMT-PLA3SB12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, AlSiC Flat Baseplate - CMT-PLA9869
SiC MOSFET 1200V/40mOhms - CMT-PLA2218
IGBT Power Module 1200V/300A - CMT-PLA8963
IGBT Power Module 1200V/200A - NEPTUNE-1210
High Temperature 1200V 10A SiC Power MOSFET - PLUTO-B1230
1200V/30A Dual SiC MOSFET module - PLUTO-B1220
1200V/20A Dual SiC MOSFET module - PLUTO-C1230
1200V/30A Buck or Boost SiC MOSFET module - PLUTO-C1220
1200V/20A Buck or Boost SiC MOSFET module - IO-1210
1200V/10A SiC Schottky Diode - EUROPA-A1230
1200V/30A Dual SiC Schottky Diode module - EUROPA-A1220
1200V/20A Dual SiC Schottky Diode module - SATURN
40V, 5A/10A/20A Power NMOS - EARTH
80V, 5A/10A Power NMOS - VENUS
-30V, 2A/4A/8A Power PMOS - NMOS8001
80V/1A compact NMOS - MARS
30V small signal PMOS - MERCURY
80V small signal NMOS - ELARA
Quad Diode 80V/450mA - CALLISTO
Dual Diode 80V/300mA - Common Anode - GANYMEDE
Dual Diode 80V/300mA - Series connection - AMALTHEA
Dual Diode 80V/3A
- CXT-PLA3SA12340A
- DC-DC Converters
- Gate Drivers
- Analog-to-digital Converters & Comparators
- Amplifiers
- Logic Gates
- Oscillators & Timers
GANYMEDE
Dual Diode 80V/300mA - Series connection
The CHT-GANYMEDE is a high temperature dual series 80V / 300mA diode in a hermetically sealed TO18 metal can package. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low. This dual diode can be used in a variety of applications, including rectification, clamping and general purpose.
Typical performances:
- Temperature range: -55°C to +225°C
- Maximum reverse voltage: 80V
- Max forward current @ 225°C: 300mA
- Capacitance: 8.5pF
- Reverse leakage: 8.9µA @ 225°C
- TO18 metal can package
Application
- Clamping
- Voltage multiplier / charge-pumps
- Signal rectification
- General purpose diode
If you need support for your high temperature design, contact Cissoid.
Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.
Die Map
Supporting its customers in the manufacturing of high temperature and high reliability hybrid modules, CISSOID delivers most of its CHT products as bare die. Please, do not hesitate to contact CISSOID to request die map information including die dimension, die finish, location and description of the bonding pads.
Ordering information
| Product name | Description | Ordering reference | Package | Marking |
|---|---|---|---|---|
| GANYMEDE | Dual series diodes, 80V / 300mA | CHT-PLA5598C-TO18-T | TO-18 | CHT-5598C |
| GANYMEDE | Dual series diodes, 80V / 300mA | CHT-PLA5598C-D-T | Known Good Die | - |