Homepage > Products > Power Modules, Transistors & Diodes > CMT/CXT Series (-55°C/-40°C to 175°C): SiC & IGBT power devices & modules > CMT-PLA2218
- Voltage References & Regulators
- Power Modules, Transistors & Diodes
- CXT-PLA3SA12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12450A
SiC MOSFET Intelligent Power Module 1200V/450A, 3-Phase, Pin Fin Baseplate - CXT-PLA3SA12550A
SiC MOSFET Intelligent Power Module 1200V/550A, 3-Phase, Pin Fin Baseplate - CMT-PLA3SB12340A
SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, AlSiC Flat Baseplate - CMT-PLA9869
SiC MOSFET 1200V/40mOhms - CMT-PLA2218
IGBT Power Module 1200V/300A - CMT-PLA8963
IGBT Power Module 1200V/200A - NEPTUNE-1210
High Temperature 1200V 10A SiC Power MOSFET - PLUTO-B1230
1200V/30A Dual SiC MOSFET module - PLUTO-B1220
1200V/20A Dual SiC MOSFET module - PLUTO-C1230
1200V/30A Buck or Boost SiC MOSFET module - PLUTO-C1220
1200V/20A Buck or Boost SiC MOSFET module - IO-1210
1200V/10A SiC Schottky Diode - EUROPA-A1230
1200V/30A Dual SiC Schottky Diode module - EUROPA-A1220
1200V/20A Dual SiC Schottky Diode module - SATURN
40V, 5A/10A/20A Power NMOS - EARTH
80V, 5A/10A Power NMOS - VENUS
-30V, 2A/4A/8A Power PMOS - NMOS8001
80V/1A compact NMOS - MARS
30V small signal PMOS - MERCURY
80V small signal NMOS - ELARA
Quad Diode 80V/450mA - CALLISTO
Dual Diode 80V/300mA - Common Anode - GANYMEDE
Dual Diode 80V/300mA - Series connection - AMALTHEA
Dual Diode 80V/3A
- CXT-PLA3SA12340A
- DC-DC Converters
- Gate Drivers
- Analog-to-digital Converters & Comparators
- Amplifiers
- Logic Gates
- Oscillators & Timers
Download datasheet
CMT-PLA2218
IGBT Power Module 1200V/300A

CMT-PLA2218 is a High Temperature High Half-bridge IGBT power module, available in standard 62mm power package. The product is guaranteed for normal operation over the full range -55°C to +175°C(Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 300A. The device features free-wheeling diodes in parallel with IGBT transistors.
Typical performances:
- Temperature range: -55°C to +175°C (Tj)
- Collector voltage up to 1200V
- Max Collector current: 300A DC @ Tc=100°C
- Collector-Emitter saturation voltage: 1.85V @ 25°C/300A
- 62mm power package
Application
- Switched-mode Power Supply
- High Voltage DC-DC Converters
- Motor Drives
- Battery Chargers
- Solar Inverters
If you need support for your power converter design, contact Cissoid.
Ordering information
Product name | Ordering reference | Package | Marking |
---|---|---|---|
CMT-PLA2218 | CMT-PLA2218A | 62mm HB | CMT-PLA2218A |