27 April 2021

CISSOID expands its SiC Intelligent Power Modules platform for E-Mobility and Aerospace Markets

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HADESŪv2 High Voltage Isolated Gate Driver EVK

EVK-HADES1210 Evaluation Kit implements a power half-bridge based on the HADES v2 isolated gate driver and two CISSOID's NEPTUNE, a 10A/1200V SiC MOSFET.
It includes an evaluation board that can be used immediately to implement a power converter or a motor drive, and is designed for bus voltage up to 1200V and with application current up to 10A. The two channels can be controlled independently of each other or use a locally generated non-overlap delay.
The Reference Design is based on the 2nd generation HADES chipset which consists of 2 devices: a Primary device CHT-HADES2P and a secondary device CHT-HADES2S.
The solution includes an isolated power supply built around CHT-HADES2P PWM controller.
The Evaluation Board EVK-HADES2® can be used for immediate testing with SiC MOSFET devices. The board is populated with CISSOID integrated circuits in ceramic package guaranteed for -55°C to +225°C. The board is based on a polyimide PCB (rated 200°C). The passive components and the desaturation diode allow operation up to 175°C, with possible short excursions to 225°C for testing. The evaluation board is delivered with the complete electrical schematic, the bill of materials including active and passive components, the Gerber files.

Typical performances:

  • Board size: 68mm * 54mm
  • CISSOID Active components guaranteed for -55° to +225°C (Tj)
  • 200°C Polyimide PCB
  • Board qualified for 175°C ambient
    • Short excursions to 225°C for testing allowed
  • Isolated High-side and Low-side gate drivers
  • Isolated DC-DC Converter supplying floating drivers
  • High Temperature 10A/1200V SiC MOSFET switches
  • DC Bus voltage: 600V Typ.(designed for 1200V max)
  • Isolation (primary - secondary):
    • 2,500VAC @50Hz (for 1mn)
    • >100MΩ @ 500VDC
  • Common mode transient immunity: 30kV/µs Typ.(designed for 50kV/µs)
  • Delay time (PWM to VOUT): 200ns typ.
  • Gate voltage: 20V / -5V nominal
  • Power FET gate rise time: 40ns typ.
  • Power FET gate fall time: 40ns typ.
  • DC-DC Converter switching frequency: 180kHz Typ.
  • Single power supply: [12-15V] ±10%
  • Interfacing voltage (digital I/Os): 15V ±10%
  • Under voltage lockout (UVLO)
  • Independent PWM inputs for HS and LS drivers or single PWM input with on-board non-overlapping
  • Desaturation protection
  • Isolated fault outputs



  • Ideally suited for high reliability markets like automotive, aerospace, railway, Oil & Gas.
  • Motor drivers: down-hole, electrical cars, railway, industrial pumps...
  • DC-DC converters and SMPS: battery chargers....
  • Inverters : Solar inverters, smart grid, EV and HEV, 3 phases inverter,...
  • Power conversion: uninterruptible power supplies, wind turbine...

Isolated high-voltage half-bridge gate driver based on CHT-HADES2P and CHT-HADES2S

Ordering information

A product brief for EVK-HADES1210 is available for download (see above).
The application note is available on request: Request EVK-HADES1210 application note.


Product description Ordering reference
HADES®v2 High Temperature Isolated Gate Driver - Evaluation Kit