- Voltage References & Regulators
- Transistors & Diodes
- DC-DC Converters
- Gate Drivers
- CMT-TIT0697
1200V Half-Bridge SiC MOSFET Gate Driver (optimized for XM3 Power Modules) - CMT-TIT8243
1200V Half-Bridge SiC MOSFET Gate Driver (optimized for 62mm Power Modules) - CMT-TIT8244
1700V Half-Bridge SiC MOSFET Gate Driver (optimized for 62mm Power Modules) - CMT-HADES2P
HADESŪv2 Gate Driver Primary Side IC (175°C) - CMT-HADES2S
HADESŪv2 Gate Driver Secondary Side IC (175°C) - EVK-HADESŪ1210
HADESŪv2 High Voltage Isolated Gate Driver EVK - CHT-HADES2P
HADESŪv2 Gate Driver Primary Side IC - CHT-HADES2S
HADESŪv2 Gate Driver Secondary Side IC - HYPERION
40V Half-bridge Gate Driver - ATLAS
Dual Channel Power Transistor Driver
- CMT-TIT0697
- Analog-to-digital Converters & Comparators
- Amplifiers
- Logic Gates
- Oscillators & Timers
EVK-HADESŪ1210
HADESŪv2 High Voltage Isolated Gate Driver EVK
EVK-HADES1210 Evaluation Kit implements a power half-bridge based on the HADES v2 isolated gate driver and two CISSOID's NEPTUNE, a 10A/1200V SiC MOSFET.
It includes an evaluation board that can be used immediately to implement a power converter or a motor drive, and is designed for bus voltage up to 1200V and with application current up to 10A. The two channels can be controlled independently of each other or use a locally generated non-overlap delay.
The Reference Design is based on the 2nd generation HADES chipset which consists of 2 devices: a Primary device CHT-HADES2P and a secondary device CHT-HADES2S.
The solution includes an isolated power supply built around CHT-HADES2P PWM controller.
The Evaluation Board EVK-HADES2® can be used for immediate testing with SiC MOSFET devices. The board is populated with CISSOID integrated circuits in ceramic package guaranteed for -55°C to +225°C. The board is based on a polyimide PCB (rated 200°C). The passive components and the desaturation diode allow operation up to 175°C, with possible short excursions to 225°C for testing. The evaluation board is delivered with the complete electrical schematic, the bill of materials including active and passive components, the Gerber files.
Typical performances:
- Board size: 68mm * 54mm
- CISSOID Active components guaranteed for -55° to +225°C (Tj)
- 200°C Polyimide PCB
- Board qualified for 175°C ambient
- Short excursions to 225°C for testing allowed
- Isolated High-side and Low-side gate drivers
- Isolated DC-DC Converter supplying floating drivers
- High Temperature 10A/1200V SiC MOSFET switches
- DC Bus voltage: 600V Typ.(designed for 1200V max)
- Isolation (primary - secondary):
- 2,500VAC @50Hz (for 1mn)
- >100MΩ @ 500VDC
- Common mode transient immunity: 30kV/µs Typ.(designed for 50kV/µs)
- Delay time (PWM to VOUT): 200ns typ.
- Gate voltage: 20V / -5V nominal
- Power FET gate rise time: 40ns typ.
- Power FET gate fall time: 40ns typ.
- DC-DC Converter switching frequency: 180kHz Typ.
- Single power supply: [12-15V] ±10%
- Interfacing voltage (digital I/Os): 15V ±10%
- Under voltage lockout (UVLO)
- Independent PWM inputs for HS and LS drivers or single PWM input with on-board non-overlapping
- Desaturation protection
- Isolated fault outputs
Application
- Ideally suited for high reliability markets like automotive, aerospace, railway, Oil & Gas.
- Motor drivers: down-hole, electrical cars, railway, industrial pumps...
- DC-DC converters and SMPS: battery chargers....
- Inverters : Solar inverters, smart grid, EV and HEV, 3 phases inverter,...
- Power conversion: uninterruptible power supplies, wind turbine...
Isolated high-voltage half-bridge gate driver based on CHT-HADES2P and CHT-HADES2S
Ordering information
A product brief for EVK-HADES1210 is available for download (see above).
The application note is available on request: Request EVK-HADES1210 application note.
| Product description | Ordering reference |
|---|---|
| EVK-HADES1210: HADES®v2 High Temperature Isolated Gate Driver - Evaluation Kit |
EVK-TIT2785A-T |