- Voltage References & Regulators
- Power Modules, Transistors & Diodes
- DC-DC Converters
- Gate Drivers
- CMT-TIT0697
1200V Half-Bridge SiC MOSFET Gate Driver (optimized for XM3 Power Modules) - CMT-TIT8243
1200V Half-Bridge SiC MOSFET Gate Driver (optimized for 62mm Power Modules) - CMT-TIT8244
1700V Half-Bridge SiC MOSFET Gate Driver (optimized for 62mm Power Modules) - CMT-HADES2P
HADESŪv2 Gate Driver Primary Side IC (175°C) - CMT-HADES2S
HADESŪv2 Gate Driver Secondary Side IC (175°C) - EVK-HADESŪ1210
HADESŪv2 High Voltage Isolated Gate Driver EVK - CHT-HADES2P
HADESŪv2 Gate Driver Primary Side IC - CHT-HADES2S
HADESŪv2 Gate Driver Secondary Side IC - HYPERION
40V Half-bridge Gate Driver - ATLAS
Dual Channel Power Transistor Driver
- CMT-TIT0697
- Analog-to-digital Converters & Comparators
- Amplifiers
- Logic Gates
- Oscillators & Timers
CHT-HADES2S
HADESŪv2 Gate Driver Secondary Side IC
CHT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive wide-bandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires. It also features the highest output current in the industry for products of this type. CHT-HADES2S can be used with standard silicon MOSFETs and IGBTs in standard temperature applications (e.g. 125°C) where it brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The circuit features push-pull transistors capable of sourcing/sinking up to 12A each. It includes as well soft-shutdown, under-voltage lockout, desaturation detection, Active Miller Clamping, over-temperature sensing and isolation interface to primary function.
CHT-HADES2S can be used either stand-alone or in combination with CHT-HADES2P, which generates control signal to drive high bandwidth transistors.
Typical performances:
- Operating temperature: -55°C to +225°C
- Supply voltage: 5 to 30V
- Output peak current:
- 12A @ 125°C
- 8A @ 225°C
- RDSON:
- 0.25Ω typ. @ 25°C
- 0.45Ω typ. @ 225°C
- Max PWM frequency : 1MHz
- Propagation delay: 160 ns typ.
- Rise time / fall time (CLoad=1nF): 30ns typ
- Isolated OOK modulated interface:
- 1 TX and RX channels
- Standard digital interface (PWM, FAULT)
- Soft-shut down
- Desaturation detection w/ programmable threshold & blanking time
- Under-Voltage Lockout (UVLO)
- Over temperature protection
- Fault generation with programmable automatic re-start timer
- Active Miller Clamping (w/ ext. MOSFET)
- Common mode transient immunity:
- >50kV/µs typ.
- Capable to drive wide variety of power switch types
- Package: Ceramic CQFP32
Application
- Ideally suited for high reliability markets like automotive, aerospace, railway, Oil & Gas.
- Motor drivers: down-hole, electrical cars, railway, industrial pumps...
- DC-DC converters and SMPS: battery chargers....
- Inverters : Solar inverters, smart grid, EV and HEV, 3 phases inverter,...
- Power conversion: uninterruptible power supplies, wind turbine...
An evaluation kit EVK-HADES1210 implementing a high-temperature isolated gate driver based on CHT-HADES2P and CHT-HADES2S is available at Cissoid.
If you need support for your high temperature design, contact Cissoid.
Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.
Isolated high-voltage half-bridge gate driver based on CHT-HADES2P and CHT-HADES2S
Ordering information
| Product name | Ordering reference | Package | Marking |
|---|---|---|---|
| HADES2S | CHT-TIT0521B-CQFP32-T | Ceramic QFP32 | CHT-TIT0521B |