17 October 2018

CISSOID & GPT partner on SiC

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Dual Channel Power Transistor Driver

CHT-ATLAS is a high-temperature, high reliability power transistor driver integrated circuit specifically designed to drive widebandgap power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices including normally-On and normally-Off JFETs, MOSFETs and BJTs. It is also used with standard silicon MOSFETs and IGBTs in standard temperature applications (e.g. 125°C) where it brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The circuit features 2 independent push-pull channels capable of sourcing/sinking 2A each. When configured together to drive a single power switch, the combination of the 2 distinct channels allows driving of specific devices that require for instance a dynamic pulse of current in combination with a continuous current in order to be properly turned-on. The circuit includes a soft-shut-down capability that slowly shuts down the power transistor in case of fault.

Typical performances:

  • Temperature range: -55°C to 225°C
  • Scalable sink/source current from 2A to 20A
  • Supply Voltage: 5V to 30V
  • Capable to drive normally-On and normally-Off power devices
  • Available Package: Ceramic SOIC28



  • Intelligent Power Modules (IPM)
  • Power conversion, power generation and actuator controls in aeronautics
  • Solar inverters
  • Motor drives, battery chargers and
  • DC-DC converters in EV / HEV
  • Power conversion and motor drive in railway
  • Switched mode power supplies (SMPS)
  • Wind turbine power converters

An evaluation kit EVK-THEMIS-ATLAS implementing a high-temperature power transistor driver and controller based on CHT-THEMIS and CHT-ATLAS is available at Cissoid.


Ordering information

Product name Ordering reference Package Marking