Power Semiconductors

Silicon Carbide

Silicon Carbide (SiC) power transistors are now offering outstanding performance versus their silicon counterparts. Their low on-resistance at high blocking voltages, high switching speed and thermal performance brings significant gains in size, weight and efficiency for motor drives, power converters and battery chargers in electric vehicles (EV). 

An important challenge for the adoption of SiC and other wide bandgap transistors in high power applications is the availability of well-optimized power modules as well as the learning curve in reliably driving them.

Intelligent Control Modules answer both challenges by offering highly integrated plug-in solutions, accelerating time-to-market and saving engineering resources. Transitioning to SiC is a long journey that can be reduced drastically by adopting our SiC Intelligent Power Module platform, benefiting from more than 15 years of expertise in the development of SiC power modules and gate drivers.

IGBT

Insulated Gate Bipolar Transistor (IGBT) power discretes and power modules, based on Trench Gate Field Stop (TG-FS) technology, remain a cornerstone of high-power electronics, even as Silicon Carbide (SiC) devices gain traction in specific applications. While SiC offers advantages in very high-frequency and extreme-efficiency designs, IGBTs continue to deliver the best balance of performance, ruggedness, and cost-effectiveness, making them the most economical choice for a wide range of applications. With low conduction and switching losses, strong short-circuit capability and proven reliability, Trench Gate Field Stop IGBTs will remain a dominant technology for many years to come, ensuring efficient, scalable, and durable solutions in mainstream high-power conversion.