CISSOID presents new High Temperature SiC Devices at HiTEN 2017
CISSOID is participating at the High Temperature Electronics Conference (HiTEN 2017) organised by the International Microelectronics Assembly and Packaging Society (IMAPS) on 10th to 12th of July in Cambridge, UK.
Etienne Vanzieleghem, VP Engineering at CISSOID, will present a new High Temperature Half Bridge 1200V/30A SiC MOSFET Intelligent Power Module. This new module embeds the power bridge together with the HADES isolated Gate Driver in a hermetically sealed metal package.
You are welcome to visit our booth and meet with the CISSOID team to discuss about our new high voltage SiC MOSFET’s and diodes in TO-257 metal package:
- CHT-NEPTUNE-1210: 1200V/10A/40mOhm SiC MOSFET
- CHT-NEPTUNE-1202: 1200V/2A/1.15Ohm SiC MOSFET
- CHT-IO-1210: 1200V/10A SiC Schottky Diode
- CHT-IO-1202: 1200V/2A SiC Dual Common Cathode Schottky Diode
If you are interested in using these devices in your high temperature Motor Drive or DC-DC converter developments, come and discuss with our experts about our system design solutions. They will be also pleased to talk about high temperature Automotive ASIC design with you.
If you want to meet with us, visit HITEN 2017 page: http://www.imaps.org/hiten/index.htm