NEWS

3 September 2019

CISSOID CTO talks about SiC Gate Drivers in Bodo's Power Systems

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CISSOID SiC Gate Driver in Bodo's Power Systems

Pierre Delatte, CISSOID CTO presents "A High Temperature Gate Driver for Half Bridge SiC MOSFET 62mm Power Modules" in September issue of Bodo's Power System Magazine

"Today, wide bandgap semiconductors, in particular Silicon Carbide (SiC), are ramping up as early adopters amongst automotive OEMs are moving to this more and more mature technology offering higher efficiency and increased power density. For industrial applications, more people are also attracted by the benefits of SiC Power Transistors.
In order to take full advantage of fast switching and low losses SiC MOSFETs, two main challenges remain: getting well optimized power modules featuring low parasitic inductances and having a robust and fast gate driver to reliably and efficiently drive them."

Download the full article in PDF.

IPM and TRFO module