CISSOID & Coresing partner on Wide Bandgap Semiconductors
Both companies signed strategic partnership agreement to jointly promote the development and broad applications of wide bandgap power semiconductors
Mont-Saint-Guibert, Belgium and Zhuzhou, China - November 15, 2019 - CISSOID, the leader in high temperature semiconductors for the most demanding markets, today announced that it has signed a strategic partnership agreement with Hunan Coresing Semiconductor Technology Co., LTD. (referred to as “Coresing”) at the 5th International Academic Forum of China IGBT Technology Innovation and Industry Alliance in Zhuzhou, China. The two parties will join hands to research and develop wide bandgap power technology, giving full play to its advantages like high temperature resistance, high voltage resistance, high energy density and high efficiency, as well as promoting its wide applications in many fields.
In recent years, wide bandgap semiconductor power devices (such as SiC and GaN) have gradually replaced traditional silicon devices with their diversified performance advantages in aviation and aerospace, power transmission, new energy vehicles, smart home appliances, communications and other fields. However, in various applications, wide bandgap power modules need drivers’ full supports for high temperature resistance, reliability and protection mechanisms to fully exert their advantages. Based in Belgium, CISSOID is a leading company in high temperature semiconductor solutions. It has a portfolio of drivers, which have been proven in demanding fields like aviation and aerospace, petroleum and automotive and have been used for more than 10 years. These drivers feature high temperature resistance, high reliability and high robustness and can help wide bandgap semiconductor power modules to fully exert their performance advantages in various system applications.
Coresing is a high-tech enterprise, which was founded by the investment of eight companies including CRRC Times Electric, Changan Automobile, China Southern Power Grid, Gree Electric Appliances, Zhonghuan Semiconductor and others. It integrates the businesses of R&D, testing and technical services and mainly researches and develops advanced IGBTs, new IGCTs, MOSFETs, RF of power devices as well as the materials, devices and technologies of wide bandgap power semiconductors such as SiC and GaN. Coresing worked together with China IGBT Technology Innovation and Industry Alliance to establish the Power Semiconductor Innovation Center, which aims to implement the works like common technology R&D, product development, transfer and diffusion of technological achievements, and incubation and commercial application of technology in the power semiconductor industry. It also provides technical services such as design and testing, and conducts talent cultivation and international exchange and cooperation. At present, the innovation center has been officially approved as a manufacturing innovation center of Hunan Province, and is working on the upgrade to a national-level manufacturing innovation center, creating the ecosphere of China's power semiconductor industry.
“As a representative of advanced power semiconductor technologies, wide bandgap semiconductor devices have extraordinary performance advantages and have been used in many fields. Especially, new energy vehicles are growing rapidly around the world now, boosting the continuous expansion of the market for wide bandgap power devices. As a company who pays close attention to the development of wide bandgap semiconductors, Coresing has put a lot of efforts into the R&D of wide bandgap semiconductor materials, technologies and devices, and has built the Power Semiconductor Innovation Center,” said Mr. Xiaoping Dai, General Manager of Coresing. “I am very pleased to sign a strategic partnership agreement with CISSOID. CISSOID's high temperature drivers and high temperature packaging technology used for many years can help wide bandgap power modules to achieve high temperature resistance and high energy density at the system level, and greatly improve the reliability of electronic control system. We will work with CISSOID to research and develop wide bandgap power technologies, modules and system applications, to accelerate the development of wide bandgap semiconductors in China.”
"All CRRC Times Electric, Changan Automobile, China Southern Power Grid, Gree Electric Appliances and Zhonghuan Semiconductor are top companies in China. One of their goals in jointly founding Coresing is to promote wide bandgap semiconductors to move forward. CISSOID highly expects that the cooperation with Coresing can push the efficiency and performance of wide bandgap power modules to a new level. We will leverage our proven, industry-leading high temperature driver chips and high temperature packaging design team to fully support this research and development collaboration", said Mr. Dave Hutton, CEO of CISSOID. "CISSOID has paid high attention to China market for a long time and is highly focused on the integrated development with China's semiconductor industry. At present, We have already absorbed investment from China, and have started extensive cooperation with Chinese companies in the areas of chip fabrication, packaging and testing. This joint R&D of wide bandgap semiconductor power devices between CISSOID and a top Chinese company further confirms our strategy of broad integration into China's semiconductor industrial ecosystem and our determination on accelerating the development of China's wide bandgap semiconductors."
With the rapid development of emerging fields like new energy vehicles, wide bandgap semiconductor power devices have received more and more attention and have gradually become popular. Meanwhile, according to Yole Development, the average Tj (junction temperature) of power semiconductors has always risen, and will reach and exceed 175 ℃ in few years. Therefore, the good collaboration from high temperature resistance drivers is very important for wide bandgap power devices. The cooperation between CISSOID and Coresing will give full play to their respective advantages and generate a strong synergy. The two parties will leverage industry-leading high temperature driver devices to support wide bandgap power devices, and bring high-quality wide bandgap power modules and solutions to the market, helping the fields such as new energy vehicles, smart grid and smart home appliances to achieve faster development.
CISSOID is the leader in high temperature semiconductors for the most demanding markets. With a focus on the Automotive Market we deliver solutions for efficient power conversion and compact motor drives: high voltage gate drivers for SiC & GaN transistors, Power Modules featuring low inductances and enhanced thermal performance, and automotive grade components rated at 175°C in excess of the AEC-Q100 Grade 0 qualification standard.
For the Aviation, Industrial & Oil & Gas Markets we provide solutions for harsh environment signal conditioning, motor control, timing and power supplies that provide reliable operation from -55℃ to +225℃.
Located in Tianxin High-Tech Industrial Park Zone, Zhuzhou, China, Hunan Coresing Semiconductor Technology Co., LTD. (referred to as “Coresing”) was incorporated in October 2018 with a registered capital of 500 million CNY. The company was founded by the investment of eight companies including CRRC Times Electric, Changan Automobile, China Southern Power Grid, Gree Electric Appliances, Zhonghuan Semiconductor and others, and is a high-tech enterprise integrating the businesses of R&D, testing and technical services. Coresing mainly researches and develops advanced IGBTs, super junction MOSFETs, RF of power devices and wide bandgap power semiconductors like SiC and GaN, and provides advanced power semiconductor technologies, devices and solutions.
In order to respond to the strategic layout of “China Manufacturing 2025” and implement the national “Implementation Guide for the Construction Projects of Manufacturing Innovation Centers (2016-2020)”, Coresing targets the R&D and supply, transfer and diffusion, and first commercialization of key common techonologies in major fields, and works together with China IGBT Technology Innovation and Industry Alliance to build the Power Semiconductor Innovation Center to meet the application requirements of the fields like new energy vehicles, smart grid and smart home appliancesas. Through the innovation center, the company will join hands with the backbone enterprises in the upstream, midstream and downstream of industy chain to promote the overall upgrade of core technology of power semiconductors, and guide the exchanges and deals of intellectual properties, creating an innovation platform for whole industry chain ranging from power semiconductor materials, device R&D and manufacturing to device applications.
About China IGBT Technology Innovation and Industry Alliance (IGBT Alliance)
The China IGBT Technology Innovation and Industry Alliance was prepared under the guidance of the Ministry of Industry and Information Technology and was formally established on October 19, 2014. With the purpose of “representing industry, serving industry and developing industry”, IGBT Alliance drives China's IGBT industry to become bigger and stronger by coordinating industrial superior resources, building the interactive and cooperative platform for the upstream and downstream of industry chain, and promoting the applications of IGBT products. Currently, IGBT Alliance has nearly 50 members.