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23 January 2019

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PLUTO-C1230

1200V/30A Buck or Boost SiC MOSFET module

 

CHT-PLUTO-C1230 is a high-temperature 1200V/30A Buck or Boost Module, i.e. a module including one Silicon Carbide (SiC) MOSFET and one SiC Schottky Diode, independent from each other. It is suitable to implement high-efficiency Buck (step-down) or Boost (step-up) DC-DC converters in high temperature environments. This product is guaranteed for normal operation on the full range  -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. The SiC MOSFET has an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V. The SiC Schottky Diode has a forward voltage of 1.35V at 30A.

Typical performances

  • Temperature range: -55°C to +210°C
  • Drain voltage up to 1200V
  • Max drain current @ 175°C (Tc): 25A DC (per switch)
  • On-resistance Ron = 20mΩ @ 25°C and 60mΩ @ 210°C (per switch)
  • Gate-to-Source Voltage Vgs=-5V to +20V
  • Diode forward voltage: 1.35V at 30A
  • Hermetic package with isolated case

 

Applications

  • DC motor drives and actuator control
  • DC-DC converters
  • AC-DC converters and inverters

If you need support for your high temperature design, contact Cissoid.

Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.

 

CHT-PLUTO-C1230_C1220 functional diagram                  CHT-PLUTO-C1230_C1220 package
  

Buck converter with CHT-PLUTO-C1230 Boost converter with CHT-PLUTO-C1230
Buck configuration (step-down) Boost configuration (step-up)

 

Ordering information

Product name Ordering reference Package Marking
CHT-PLUTO-C1230 CHT-PLA2228A-HM8A-T HM8A CHT-PLA2228A