NEWS

17 October 2018

CISSOID & GPT partner on SiC

This site uses cookies. By continuing to browse the site, you are agreeing to our use of cookies.
OK
Download datasheet

PLUTO-C1230

1200V/30A Buck or Boost SiC MOSFET module

 

CHT-PLUTO-C1230 is a high-temperature 1200V/30A Buck or Boost Module, i.e. a module including one Silicon Carbide (SiC) MOSFET and one SiC Schottky Diode, independent from each other. It is suitable to implement high-efficiency Buck (step-down) or Boost (step-up) DC-DC converters in high temperature environments. This product is guaranteed for normal operation on the full range  -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. The SiC MOSFET has an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V. The SiC Schottky Diode has a forward voltage of 1.35V at 30A.

Typical performances

  • Temperature range: -55°C to +210°C
  • Drain voltage up to 1200V
  • Max drain current @ 175°C (Tc): 25A DC (per switch)
  • On-resistance Ron = 20mΩ @ 25°C and 60mΩ @ 210°C (per switch)
  • Gate-to-Source Voltage Vgs=-5V to +20V
  • Diode forward voltage: 1.35V at 30A
  • Hermetic package with isolated case

 

Applications

  • DC motor drives and actuator control
  • DC-DC converters
  • AC-DC converters and inverters

If you need support for your high temperature power supply or motor drive design, just contact Cissoid.

 

CHT-PLUTO-C1230_C1220 functional diagram                  CHT-PLUTO-C1230_C1220 package
  

Buck converter with CHT-PLUTO-C1230 Boost converter with CHT-PLUTO-C1230
Buck configuration (step-down) Boost configuration (step-up)

 

Ordering information

Product name Ordering reference Package Marking
CHT-PLUTO-C1230 CHT-PLA2228A-HM8A-T HM8A CHT-PLA2228A