17 October 2018

CISSOID & GPT partner on SiC

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1200V/20A Dual SiC MOSFET module


CHT-PLUTO-B1220 is a high-temperature 1200V/20A Dual Silicon Carbide MOSFET in a single hermetic module. The intrinsic body diodes can play as freewheeling diodes with the recommendation to use a small duty cycle to limit dissipation. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 40A. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 20A. They have an On-resistance of 40mΩ at 25°C and 120mΩ at 210°C at VGS=20V.

Typical performances

  • Temperature range: -55°C to +210°C
  • Drain voltage up to 1200V
  • Max drain current @ 175°C (Tc): 17A DC (per switch)
  • On-resistance Ron = 40mΩ @ 25°C and 120mΩ @ 210°C (per switch)
  • Gate-to-Source Voltage Vgs=-5V to +20V
  • Hermetic package with isolated case



  • DC motor drives and actuator control
  • DC-DC converters
  • AC-DC converters and inverters

If you need support for your high temperature power supply or motor drive design, just contact Cissoid.


CHT-PLUTO-B1230_B1220 functional diagram                  CHT-PLUTO-A1230_A1220_B1230_B1220 package


Ordering information

Product name Ordering reference Package Marking