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15 November 2019

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CMT-PLA9869

SiC MOSFET 1200V/40mOhms

CMT-PLA9869 is a High Temperature High Voltage  Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package. The product is guaranteed for normal operation over the full range -55°C to +175°C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A. The device features a body diode that can be used as free-wheeling diode.

Typical performances:

  • Temperature range: -55°C to +175°C
  • Drain voltage up to 1200V
  • Max drain current @ 25°C: 60A DC
  • RDSon= 40mΩ @ 25°C and 75mΩ @ 175°C 
  • Vgs=-4V to +18V
  • TO-247 package

Application

  • Switched-mode Power Supply
  • High Voltage DC-DC Converters
  • Motor Drives
  • Battery Chargers
  • Solar Inverters

If you need support for your SiC-based power converter design, contact Cissoid.

Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.

 

Ordering information

Product name Ordering reference Package Marking
CMT-PLA9869 CMT-PLA9869A-TO247 TO-247 CMT-PLA9869A