IGBT Power Modules

CISSOID’s Insulated Gate Bipolar Transistor (IGBT) power modules provide a robust and cost-effective solution for medium- to high-voltage inverter systems. Built on Trench Gate Field Stop technology, they combine low conduction losses with reliable switching performance, making them a proven choice for propulsion, auxiliary power, and industrial drive applications. With decades of field success, IGBT technology remains a dominant and economical option for power electronics, particularly where cost and availability are key considerations.

Our modules are offered in drop-in compatible, industry-standard packages, ensuring straightforward integration into existing inverter designs and platforms. This compatibility allows system designers to easily scale performance without redesigning mechanics or cooling, reducing both development time and cost. Optimized layouts and low-inductance interconnections ensure stable performance across a wide operating temperature range.

Available in a broad spectrum of voltage and current ratings, CISSOID IGBT modules offer a scalable, reliable foundation for demanding applications such as electric transportation, renewable energy, and industrial power conversion. By pairing rugged IGBT technology with trusted package standards, we deliver long-term, cost-efficient solutions that complement our Silicon Carbide portfolio and give customers flexibility in choosing the right technology for their system needs.