PLUTO-B1230

1200V/30A DUAL SIC MOSFET MODULE

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CHT-PLUTO-B1230 is a high-temperature 1200V/30A Dual Silicon Carbide MOSFET in a single hermetic module. The intrinsic body diodes can play as freewheeling diodes with the recommendation to use a small duty cycle to limit dissipation. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 60A. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. They have an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V.

Key features

  • Temperature range: -55°C to +210°C
  • Drain voltage up to 1200V
  • Max drain current @ 175°C (Tc): 25A DC (per switch)
  • On-resistance Ron = 20mΩ @ 25°C and 60mΩ @ 210°C (per switch)
  • Gate-to-Source Voltage Vgs=-5V to +20V
  • Hermetic package with isolated case 

Applications

  • DC motor drives and actuator control
  • DC-DC converters
  • AC-DC converters and inverters

Ordering information

Ordering reference Description Package Status Link
CHT-PLA2316A-HM8A-T

Power Module - SiC MOS - 1200V

HM8A Last Time Buy Contact us

Documents

Type Title Link
Download CISSOID IC ALTIUM LIBRARY ZIP
Application note CISSOID IC ALTIUM LIBRARY INSTALLATION PDF
Datasheet CHT-PLUTO-B1230 DATASHEET PDF