CHT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive wide-bandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires. It also features the highest output current in the industry for products of this type. CHT-HADES2S can be used with standard silicon MOSFETs and IGBTs in standard temperature applications (e.g. 125°C) where it brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The circuit features push-pull transistors capable of sourcing/sinking up to 12A each. It includes as well soft-shutdown, under-voltage lockout, desaturation detection, Active Miller Clamping, over-temperature sensing and isolation interface to primary function. CHT-HADES2S can be used either stand-alone or in combination with CHT-HADES2P, which generates control signal to drive high bandwidth transistors.

CMT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive wide-bandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires. It also features the highest output current in the industry for products of this type. CMT-HADES2S can be used with standard silicon MOSFETs and IGBTs in standard temperature applications (e.g. 125°C) where it brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The circuit features push-pull transistors capable of sourcing/sinking up to 12A each. It includes as well soft-shutdown, under-voltage lockout, desaturation detection, Active Miller Clamping, over-temperature sensing and isolation interface to primary function. CMT-HADES2S can be used either stand-alone or in combination with CMT-HADES2P, which generates control signal to drive high bandwidth transistors.

CMT-HADES2P is a high-temperature, high reliability single chip primary side of a gate driver solution. It implements a current mode controlled DC-DC flyback converter for the generation of the on-board power supplies and the isolated data transmission from the external control interface to the 2 secondary sides and performs local fault management. This device has been designed in a way to reduce as much as possible the required number of external passive devices and to limit the requirement in high capacitor values (large footprint at high temperature). Its features a UVLO monitoring on the incoming power supply, a linear voltage regulator to generate the local 5V supply voltage and an on/off keying modulation of the data signal towards the secondary side. It offers wide voltage range for the input PWM signals (5 to 15V) and hysteresis to enhance immunity to system noise; it also features a spike filtering function on those PWM signals to prevent spurious turn-on/turn-off of the secondary gate drivers.

CMT-TIT8244 is a Gate Driver board optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, offers thermal headroom for the design of high density power converters in automotive and industrial applications. It enables high frequency (>100KHz) and fast SiC MOSFET’s switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters. The board is designed for harsh voltage environments supporting the drive of 1700V power modules with isolation voltages up to 3600V (50Hz, 1min) and creepage distances of 14mm. Protection functions such as undervoltage lockout (UVLO), Active Miller Clamping (AMC) and Desaturation detection ensure the safe drive and reliable protection of the power module in case of fault events.

CMT-TIT0697 is a Gate Driver board optimized for XM3 Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, offers thermal headroom for the design of high density power converters in automotive and industrial applications. It enables high frequency (>100KHz) and fast SiC MOSFET’s switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters. The board is designed for harsh voltage environments supporting the drive of 1200V power modules with isolation voltages up to 3600V (50Hz, 1min) and creepage distances of 14mm. Protection functions such as undervoltage lockout (UVLO), Active Miller Clamping (AMC) and Desaturation detection ensure the safe drive and reliable protection of the power module in case of fault events.

CMT-PLA2218 is a High Temperature High Half-bridge IGBT power module, available in standard 62mm power package. The product is guaranteed for normal operation over the full range -55°C to +175°C(Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 300A. The device features free-wheeling diodes in parallel with IGBT transistors.

NEPTUNE-1210 is a high-temperature, high-voltage, Silicon Carbide (SiC) MOSFET switch. It is available in a metal TO-257 package – the metal case being isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C. The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A at the maximum temperature (225°C). The device features a body diode that can be used as free-wheeling diode. This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On Resistance with equivalent switching energies.

CHT-PLUTO-B1230 is a high-temperature 1200V/30A Dual Silicon Carbide MOSFET in a single hermetic module. The intrinsic body diodes can play as freewheeling diodes with the recommendation to use a small duty cycle to limit dissipation. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 60A. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. They have an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V.

CHT-PLUTO-B1220 is a high-temperature 1200V/20A Dual Silicon Carbide MOSFET in a single hermetic module. The intrinsic body diodes can play as freewheeling diodes with the recommendation to use a small duty cycle to limit dissipation. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 40A. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 20A. They have an On-resistance of 40mΩ at 25°C and 120mΩ at 210°C at VGS=20V.

CHT-PLUTO-C1230 is a high-temperature 1200V/30A Buck or Boost Module, i.e. a module including one Silicon Carbide (SiC) MOSFET and one SiC Schottky Diode, independent from each other. It is suitable to implement high-efficiency Buck (step-down) or Boost (step-up) DC-DC converters in high temperature environments. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. The SiC MOSFET has an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V. The SiC Schottky Diode has a forward voltage of 1.35V at 30A.

CHT-PLUTO-C1220 is a high-temperature 1200V/20A Buck or Boost Module, i.e. a module including one Silicon Carbide (SiC) MOSFET and one SiC Schottky Diode, independent from each other. It is suitable to implement high-efficiency Buck (step-down) or Boost (step-up) DC-DC converters in high temperature environments. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 20A. The SiC MOSFET has an On-resistance of 60mΩ at 25°C and 120mΩ at 210°C at VGS=20V. The SiC Schottky Diode has a forward voltage of 1.5V at 20A.

IO-1210 is a high-temperature Silicon Carbide (SiC) Schottky Diode in a TO-257 hermetically sealed metal package. It is suitable to implement efficient power voltage rectifiers, e.g. in AC-DC converters. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching current up to 10A. The SiC Schottky Diode has a forward voltage of 1.2V at 10A. The maximum continuous DC current is 10A at 175°C (Tc). The Repetitive Peak Fwd Surge Current is 12A.

CHT-EUROPA-A1230 is a high-temperature Dual Silicon Carbide (SiC) Schottky Diodes in a single hermetic module. It is suitable to implement efficient power voltage rectifier, e.g. in AC-DC converter. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. The SiC Schottky Diode has a forward voltage of 1.35V at 30A. The maximum continuous DC current is in excess of 30A at 175°C (Tc). The Repetitive Peak Fwd Surge Current is 50A.

CHT-EUROPA-A1220 is a high-temperature Dual Silicon Carbide (SiC) Schottky Diodes in a single hermetic module. It is suitable to implement efficient power voltage rectifier, e.g. in AC-DC converter. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 20A. The SiC Schottky Diode has a forward voltage of 1.5V at 20A. The maximum continuous DC current is in excess of 20A at 175°C (Tc). The Repetitive Peak Fwd Surge Current is 35A.

SATURN is a family of high-temperature 40V N-channel power MOSFET's. 3 devices, called CHT-NMOS40xx, are part of this family. They are respectively rated up to 5A, 10A and 20A.

VENUS is a family of high-temperature 30V P-channel power MOSFET's. 3 devices, called CHT-PMOS30xx, are part of this family. They are respectively rated up to 2A, 4A and 8A.