27 April 2021

CISSOID expands its SiC Intelligent Power Modules platform for E-Mobility and Aerospace Markets

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1200V/2A SiC Dual Common Cathode Schottky Diode


IO-1202 is a high-temperature Silicon Carbide (SiC) Dual Common Cathode Schottky Diode in a TO-257 hermetically sealed metal package. It is suitable to implement voltage multipliers or efficient power voltage rectifiers, e.g. in AC-DC converters. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). The device has a breakdown voltage in excess of 1200V and a single diode is capable of switching current up to 2A. The SiC Schottky Diode has a forward voltage of 1.3V at 2A. The maximum continuous DC current is 2A at 175°C (Tc). The Repetitive Peak Fwd Surge Current is 2.5A.

Typical performances

  • Temperature range: -55°C to +210°C
  • Breakdown voltage up to 1200V
  • Forward voltage = 1.15V at 2A at 25°C
  • Max continuous DC current @ 175°C (Tc) = 2A DC
  • Repetitive Peak Fwd Surge Current: 2.5A
  • Hermetic package with isolated case



  • DC motor drives and actuator control
  • AC-DC converters and inverters
  • High Voltage Multipliers

If you need support for your high temperature design, contact Cissoid.

Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.


CHT-IO-1210 functional diagram                  

TO257 (Pin1= Cathode; Pin2= Anode 1 Pin3= Anode 2) (case floating)

Ordering information

Product name Ordering reference Package Marking
CHT-IO-1202 CHT-PLA6609A-TO257-T TO-257 CHT-PLA6609A