31 August 2023

CISSOID at The Battery Show North America in Novi, Michigan, on 12-14 Sept 2023.

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SiC MOSFET Intelligent Power Module 1200V/340A, 3-Phase, AlSiC Flat Baseplate

CMT-PLA3SB12340A is a 3-phase 1200V/340A Silicon Carbide (SiC) MOSFET Intelligent Power Module integrating the power switches and a gate driver based on the CISSOID HADES2 chipset.
Cooled down through a lightweight AlSiC flat baseplate, this module addresses high power density converters offering a SiC power module designed for operation at high junction temperature up to 175°C. Compared to IGBT modules, this solution gives access to the full benefits of SiC technology to achieve high efficiency, high power density and high reliability thanks to low switching losses and high temperature operation.
The integration of the gate driver together with the power module gives direct access to a fully validated and optimized solution in terms of switching speed and losses, robustness against dI/dt and dV/dt and protection of the power stages (Desat, UVLO, AMC, SSD).

Typical performances

  • Power Devices Junction Temperature: -40°C to +175°C
  • Gate Driver Ambient Temperature: -40°C to 125°C
  • Drain-to-source Breakdown Voltage: 1200V
  • Low On Resistance: 3.25mOhms typ.
  • Max Continuous Current: 340A/260A at Tc=25°C/90°C
  • Lightweight AlSiC flat baseplate
  • Junction-to-case Thermal Resistance: 0.183 °C/W typ.
  • Switching Energy@ 600V/300A: Eon=8.42mJ/Eoff=7.05mJ
  • Switching Frequency: max 50kHz
  • Isolation (baseplate - power pins): 3600VAC @50Hz (1min)
  • Common Mode Transient Immunity: >50kV/μs
  • Low parasitic capacitance (primary-secondary): typ 11pF per phase
  • Gate Driver Protections: 
    • Under Voltage Lockout (UVLO)
    • Desaturation Protection
    • Soft Shutdown turn-off (SSD)
    • Negative gate drive (-3V)
    • Active Miller Clamping (AMC)
    • Gate-Source Short-circuit Protection


  • Electrical Vehicle (EV) Motor Drives
  • Heavy Duty Motor Drives & Active Rectifiers
  • Industrial Motor Drives
  • Aerospace Motor Drives & Electromechanical Actuators

Design Support

If you need support for your SiC-based power converter design, contact Cissoid.

Download CMT-PLA3SB12340A Datasheet including a detailed application section.

Download CMT-PLA3SB12340A 3D Step file for virtual integration into your power inverter design.

Download the Application Note on DC-Link Capacitors for CISSOID SiC Intelligent Power Modules.

Download CMT-PLA3SB12340A LTspice Model.

Ordering information

Product name Ordering reference Marking Where to buy
CMT-PLA3SB12340A CMT-PLA3SB12340AA CMT-PLA3SB12340AA find a distributor



In press

If you are interested in reading about our SiC MOSFET Intelligent Power Modules:

"A 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-Mobility" in  Bodo's Power Systems Magazine, May 2020 (Download the full article in PDF, English).

"三相 1200V/450A SiC MOSFET 电动汽车智能 功率模块", in Bodo's Power Systems China Magazine, June 2020 (Download the full article in PDF, Chinese).

"Intelligent Power Modules Accelerate Transition to SiC-Based Electric Motion", in E-Mobility Technology International Magazine, Winter 2020, p128.(Download the full article in PDF, English).

"Modulo di Potenza Intelligente per la Mobilità Elettrica", Elettrica Oggi Power, Oct. 2020 (Download the full article in PDF, Italian).

"SiC MOSFET Intelligent Power Module Platform For E-Mobility Applications", at Online Wide Bandgap Conference, 9 Dec. 2020, (Download the presentation in PDF, English). 

"SiC IPMs scupper range anxiety in electric vehicles", in Electronic Specifier, April 2021.

"Liquid-cooled Modules with integrated 3-Phase SiC MOSFET", in Power Electronics News, May 2021.

"车,不用SiC都不好意思叫电动出行", in Power Electronics China, July 2021.

"Impact of Increasing Power Density & Switching Frequency on the Thermal Requirements & Design of Gate Drivers", at ECPE Workshop on Advanced Drivers for Si, SiC & GaN Power Semiconductor Devices, 15-16 February 2022 (Download the presentation in PDF). 

"碳化硅器件挑战现有封装技术", in Electronics and Packaging, February 2022.

"碳化硅模块的高温封装已成趋势", in Compound Semiconductor China, March 2022.