New Gate Drivers, SiC MOSFET's & Power Modules
CISSOID to exhibit new High Temperature Gate Drivers, SiC MOSFET's and Power Modules at PCIM 2019 in Nuremberg
Mont-Saint-Guibert, Belgium – May 2 2019. CISSOID, the leader in high temperature semiconductors for the most demanding markets, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the world's leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management.
The company is introducing a new Gate Driver board optimized for 62mm Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, can also drive IGBT Power Modules whilst offering thermal headroom for the design of high density power converters in automotive and industrial applications. It enables high frequency (>100KHz) and fast SiC MOSFET’s switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters. The board is designed for harsh voltage environments supporting the drive of 1200V and 1700V power modules with isolation voltages up to 3600V (50Hz, 1min) and creepage distances of 14mm. Protection functions such as undervoltage lockout (UVLO), Active Miller Clamping (AMC) and Desaturation detection ensure the safe drive and reliable protection of the power module in case of fault events. “This new SiC Gate Driver board is the outcome of several years of developpement working with industry leaders in Automotive, Transportation and Aerospace markets. It combines CISSOID expertise in SiC Devices with our long experience in designing chips and electronic systems for harsh environments.” says Etienne Vanzieleghem, CISSOID VP of Engineering.
In Nuremberg, CISSOID will also present new SiC MOSFET’s and IGBT Power Modules. A new discrete 1200V/40mOhms SiC MOSFET transistor is available in a TO-247 package and fully characterized from -55°C up to 175°C. This MOSFET features a drain-to-source On Resistance of 40mOhms at 25°C (Tj) and 75mOhms at 175°C (Tj). Low switching turn-on and turn-off energies, respectively 1mJ and 0.4mJ, makes this device ideal for efficient and compact DC-DC converters, power inverters and battery chargers. The company will also present two 62mm 1200V IGBT Power Modules with 200A and 300A current rating.
CISSOID is also working on SiC MOSFET Power Modules that will be introduced in the coming months. “These new products show CISSOID commitment in providing a comprehensive offering of SiC-based solutions including transistors, modules and gate drivers to support industry transition towards highly efficient, lightweight and compact power conversion for use in new electric vehicles and renewable energies” says Dave Hutton, CISSOID CEO. “We are closely working with automotive OEM and Tier suppliers to customise our gate drivers for new SiC-based power inverters.” He added.
For more information, visit http://www.cissoid.com/new-products/