NEWS

3 September 2019

CISSOID CTO talks about SiC Gate Drivers in Bodo's Power Systems

This site uses cookies. By continuing to browse the site, you are agreeing to our use of cookies.
OK
Homepage > New Products > IGBT Power Modules

IGBT Power Modules

High Temperature High Half-bridge IGBT power modules available in 62mm power package guaranteed from -55C to +175C (Tj). The devices have a breakdown voltage in excess of 1200V and can switch currents up to respectively 200A and 300A.