NEWS

3 September 2019

CISSOID CTO talks about SiC Gate Drivers in Bodo's Power Systems

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SiC MOSFET's

High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package and guaranteed from -55C to +175C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A.