NEWS

15 November 2019

CISSOID and Coresing signed strategic partnership on wide bandgap power semiconductors

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SiC MOSFET's

High Temperature High Voltage Silicon Carbide (SiC) MOSFET transistor, available in standard TO-247 package and guaranteed from -55C to +175C (Tj). The device has a breakdown voltage in excess of 1200V and can switch currents up to 60A.