17 October 2018

CISSOID & GPT partner on SiC

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1200V/20A Buck or Boost SiC MOSFET module


CHT-PLUTO-C1220 is a high-temperature 1200V/20A Buck or Boost Module, i.e. a module including one Silicon Carbide (SiC) MOSFET and one SiC Schottky Diode, independent from each other. It is suitable to implement high-efficiency Buck (step-down) or Boost (step-up) DC-DC converters in high temperature environments. This product is guaranteed for normal operation on the full range  -55°C to +210°C (Tj). Each device has a breakdown voltage in excess of 1200V and is capable of switching current up to 20A. The SiC MOSFET has an On-resistance of 60mΩ at 25°C and 120mΩ at 210°C at VGS=20V. The SiC Schottky Diode has a forward voltage of 1.5V at 20A.

Typical performances

  • Temperature range: -55°C to +210°C
  • Drain voltage up to 1200V
  • Max drain current @ 175°C (Tc): 17A DC (per switch)
  • On-resistance Ron = 60mΩ @ 25°C and 120mΩ @ 210°C (per switch)
  • Gate-to-Source Voltage Vgs=-5V to +20V
  • Diode forward voltage: 1.5V at 20A
  • Hermetic package with isolated case



  • DC motor drives and actuator control
  • DC-DC converters
  • AC-DC converters and inverters

If you need support for your high temperature power supply or motor drive design, just contact Cissoid.


CHT-PLUTO-C1230_C1220 functional diagram                  CHT-PLUTO-C1230_C1220 package

Buck converter with CHT-PLUTO-C1230 Boost converter with CHT-PLUTO-C1230
Buck configuration (step-down) Boost configuration (step-up)


Ordering information

Product name Ordering reference Package Marking