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23 January 2019

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PLUTO-B1230

1200V/30A Dual SiC MOSFET module

 

CHT-PLUTO-B1230 is a high-temperature 1200V/30A Dual Silicon Carbide MOSFET in a single hermetic module. The intrinsic body diodes can play as freewheeling diodes with the recommendation to use a small duty cycle to limit dissipation. It is suitable to implement a power half bridge for applications such as DC-DC converters or motor drives in high temperature environments. The two independent switches can be used in parallel to deliver a total of 60A. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). Each MOSFET has a breakdown voltage in excess of 1200V and is capable of switching current up to 30A. They have an On-resistance of 20mΩ at 25°C and 60mΩ at 210°C at VGS=20V.

Typical performances

  • Temperature range: -55°C to +210°C
  • Drain voltage up to 1200V
  • Max drain current @ 175°C (Tc): 25A DC (per switch)
  • On-resistance Ron = 20mΩ @ 25°C and 60mΩ @ 210°C (per switch)
  • Gate-to-Source Voltage Vgs=-5V to +20V
  • Hermetic package with isolated case

 

Applications

  • DC motor drives and actuator control
  • DC-DC converters
  • AC-DC converters and inverters

If you need support for your high temperature design, contact Cissoid.

Download CISSOID's Altium Library for IC symbols and package footprints. For installation, read the related Application Note.

 

CHT-PLUTO-B1230_B1220 functional diagram                  CHT-PLUTO-A1230_A1220_B1230_B1220 package

 

Ordering information

Product name Ordering reference Package Marking
CHT-PLUTO-B1230 CHT-PLA2316A-HM8A-T HM8A CHT-PLA2316A