17 October 2018

CISSOID & GPT partner on SiC

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1200V/10A SiC Schottky Diode


IO-1210 is a high-temperature Silicon Carbide (SiC) Schottky Diode in a TO-257 hermetically sealed metal package. It is suitable to implement efficient power voltage rectifiers, e.g. in AC-DC converters. This product is guaranteed for normal operation on the full range -55°C to +210°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching current up to 10A. The SiC Schottky Diode has a forward voltage of 1.2V at 10A. The maximum continuous DC current is 10A at 175°C (Tc). The Repetitive Peak Fwd Surge Current is 12A.

Typical performances

  • Temperature range: -55°C to +210°C
  • Breakdown voltage up to 1200V
  • Forward voltage = 1.2V at 10A at 25°C
  • Max continuous DC current @ 175°C (Tc) = 10A DC
  • Repetitive Peak Fwd Surge Current: 12A
  • Hermetic package with isolated case



  • DC motor drives and actuator control
  • AC-DC converters and inverters

If you need support for your high temperature power supply or motor drive design, just contact Cissoid.

CHT-IO-1210 functional diagram                  

TO257 (Pin1= Cathode; Pin2= Anode Pin3= NC) (case floating)

Ordering information

Product name Ordering reference Package Marking
CHT-IO-1210 CHT-PLA1122A-TO257-T TO-257 CHT-PLA1122A