23 January 2019

CISSOID's Altium Library now available for download

This site uses cookies. By continuing to browse the site, you are agreeing to our use of cookies.
Download datasheet


High temperature half-bridge with isolated gate driver

HADES® is a turnkey half-bridge isolated gate driver Reference Design designed for high-temperature, high speed and high-reliability applications. While it has been tailored to support the newest generation of wide-bandgap power switches such as SiC and GaN, the solution is also suitable for driving standard IGBTs or transistors anywhere there is a need to improve the reliability of the systems.
With a standard gate current capability of ±4A or ±2A, the solution is scalable up to ±20A, while supporting a bus voltage up to 1200V.


Typical performances:

  • CISSOID Active components guaranteed for -55° to +225°C (Tj) 
  • 200°C Polyimide PCB
    • Board qualified for 175°C ambient (Short excursions to 225°C for testing allowed)
  • High-side and Low-side gate driver
  • Designed for 1200VDC bus voltage
  • Gate output current ±4A 
  • Isolation (primary – secondary):
    • 2,500VAC @50Hz (for 1mn)
    • >100MΩ @ 500VDC
  • Common mode transient immunity:
    • 30kV/µs typ (designed for 50kV/µs)
  • Delay time (PWM to NGH/NGL)): 200ns typ.
  • Gate voltage: 
    • MOSFET support: 20V / -5V nominal (EVK-TIT0636A)
    • JFET (SemiSouth normally-OFF SJEP120R100) support : -16V / 16V (EVK-TIT0636B)
  • Rise time (on a 1nF load): 10ns typ.
  • Fall time (on a 1nF load): 10ns typ.
  • Switching frequency: up to 150kHz (possibly beyond)
  • Single power supply: +12V ±10%
  • Interfacing voltage (digital I/Os): 5V ±10%
  • Under voltage lockout (UVLO) 
  • Independent PWM inputs for HS and LS drivers or single PWM input with on-board non-overlapping
  • Active Miller clamping
  • Desaturation protection
  • Isolated fault outputs 


  • Motor drives
  • Battery chargers
  • Electrical distribution:
    • AC-DC converters
    • DC-DC converters
    • DC-AC inverters 

EVK-HADES: schematic
EVK-HADES block diagram: isolated high-temperature high-voltage gate driver

Ordering information

A product brief for EVK-HADES is available for download (see above).
The application note is available on request: Request EVK-HADES application note.

The Evaluation Board EVK-HADES® can be used immediately to implement a power converter or a motor drive, supporting a bus voltage up to 600V/1200V and gate currents up to ±2A (SemiSouth normally Off JFETs) or ±4A (Cree MOSFETs) . The two channels (high and low-sides) can be controlled independently of each other or used in a half-bridge configuration. In the latter case, the EVK-HADES board in combination with external power switches can form a complete 1-leg inverter solution for immediate evaluation and testing.
The Reference Design is based on the chipset CHT-THEMIS / CHT-ATLAS and CHT-RHEA. The solution also includes an isolated power supply built with CHT-MAGMA PWM controller. For applications that require greater gate currents, designers can modify HADES® Reference Design and build their own board by adding up to 5 additional CHT-ATLAS circuits per channel (high-side and low side) in order to source / sink up to +/-20A to the gate of the power switch devices. 
The board EVK-HADES is populated with CISSOID integrated circuits in ceramic package form (CSOIC28), guaranteed for -55°C to +225°C. The board is based on a polyimide PCB (rated 200°C). The passive components and the desaturation diode allow operation up to 175°C, with possible short excursions to 225°C for testing. The evaluation board is delivered with the complete electrical schematic, the bill of materials including active and passive components, the Gerber files.


Product description Ordering reference
High-Temperature Half-Bridge Isolated Gate-Driver dedicated to SiC MOSFETs